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| 型号： | MCP6409T-H/SL |
| 厂商： | Microchip Technology |
| 文件页数： | 23/44页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP QUAD 1.8V 1MHZ 14SOIC |
| 标准包装： | 2,600 |
| 放大器类型： | 通用 |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 0.5 V/µs |
| 增益带宽积： | 1MHz |
| 电流 - 输入偏压： | 1pA |
| 电压 - 输入偏移： | 4500µV |
| 电流 - 电源： | 45µA |
| 电流 - 输出 / 通道： | 15mA |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 带卷 (TR) |
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2009-2011 Microchip Technology Inc.
DS22229D-page 3
MCP6401/1R/1U/2/4/6/7/9
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-) .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (TJ).......................... +155°C
ESD Protection on All Pins (HBM; MM; CDM)
....≥ 4 kV; 300V,
1500V
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
1.2
MCP6401/1R/1U/2/4 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8v to +6.0v, VSS =GND,
Parameters
Sym
Min
Typ
Max
Units
Temp
Parts
(Note 1)
Conditions
Input Offset
Input Offset Voltage
VOS
-4.5
±0.8
+4.5
mV
E, H
VCM = VSS
—
±1.0
—
mV
+125°C
E
—
±1.5
—
mV
+150°C
H
Input Offset Drift with
Temperature
ΔV
OS/ΔTA
—
±2.0
—
V/°C
-40°C
to
+125°C
EVCM = VSS
—
±2.5
—
V/°C
-40°C
to
+150°C
H
Power Supply
Rejection Ratio
PSRR
63
78
—
dB
E, H
VCM = VSS
—
75
—
dB
+125°C
E
—
73
—
dB
+150°C
H
Input Bias Current and Impedance
Input Bias Current
IB
—
1
100
pA
E, H
—30
—
pA
+85°C
E, H
—
800
—
pA
+125°C
E
—
7
—
nA
+150°C
H
Input Offset Current
IOS
—1
—
pA
E, H
—5
—
pA
+85°C
E, H
—
20
—
pA
+125°C
E
—
45
—
pA
+150°C
H
Note 1:
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
2:
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