参数资料
型号: MCP660-E/SL
厂商: Microchip Technology
文件页数: 17/68页
文件大小: 0K
描述: IC OPAMP TRPL 6MA 60MHZ 14SOIC
标准包装: 57
放大器类型: 通用
电路数: 3
输出类型: 满摆幅
转换速率: 32 V/µs
增益带宽积: 60MHz
电流 - 输入偏压: 6pA
电压 - 输入偏移: 1800µV
电流 - 电源: 6mA
电流 - 输出 / 通道: 80mA
电压 - 电源,单路/双路(±): 2.5 V ~ 5.5 V,±1.25 V ~ 2.75 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 管件
MCP660/1/2/3/4/5/9
DS22194D-page 24
2009-2012 Microchip Technology Inc.
4.4.2
GAIN PEAKING
Figure 4-8 shows an op amp circuit that represents
non-inverting amplifiers (VM is a DC voltage and VP is
the input) or inverting amplifiers (VP is a DC voltage
and VM is the input). The capacitances CN and CG rep-
resent the total capacitance at the input pins; they
include the op amp’s Common mode input capacitance
(CCM), board parasitic capacitance and any capacitor
placed in parallel.
FIGURE 4-8:
Amplifier with Parasitic
Capacitance.
CG acts in parallel with RG (except for a gain of +1 V/V),
which causes an increase in gain at high frequencies.
CG also reduces the phase margin of the feedback
loop, which becomes less stable. This effect can be
reduced by either reducing CG or RF.
CN and RN form a low-pass filter that affects the signal
at VP. This filter has a single real pole at 1/(2RNCN).
The largest value of RF that should be used, depends
on noise gain (see GN in Section 4.4.1 “Capacitive
Loads”), CG and the open-loop gain’s phase shift.
Figure 4-9 shows the maximum recommended RF for
several CG values. Some applications may modify
these values to reduce either output loading or gain
peaking (step response overshoot).
FIGURE 4-9:
Maximum Recommended
RF vs. Gain.
Figure 2-35 and Figure 2-36 show the small signal and
large signal step responses at G = +1 V/V. The unity
gain buffer usually has RF = 0 and RG open.
Figure 2-37 and Figure 2-38 show the small signal and
large signal step responses at G = -1 V/V. Since the
noise gain is 2 V/V and CG 10 pF, the resistors were
chosen to be RF = RG = 401 and RN = 200.
It is also possible to add a capacitor (CF) in parallel with
RF to compensate for the destabilizing effect of CG.
This makes it possible to use larger values of RF. The
conditions for stability are summarized in Equation 4-6.
EQUATION 4-6:
VP
RF
VOUT
RN
CN
VM
RG
CG
MCP66X
1.E+02
1.E+03
1.E+04
1.E+05
110
100
Noise Gain; GN (V/V)
M
axi
m
u
m
R
eco
m
en
d
ed
R
F
(
)
GN > +1 V/V
100
10k
100k
1k
CG = 10 pF
CG = 32 pF
CG = 100 pF
CG = 320 pF
CG = 1 nF
fF fGBWP 2GN2
, GN1 GN2
We need:
GN1
1
RF RG
+
=
GN2
1
CG CF
+
=
fF
12
R
FCF
=
fZ
fF GN1 GN2
=
Given:
fF fGBWP 4GN1
, GN1 GN2
相关PDF资料
PDF描述
6-103164-5 34 MODII HDR DRRA 3/4SHRD LF
9-146305-0-29 CONN HEADR BRKWAY .100 29POS R/A
2-102620-6 CONN HEADER 60POS DL R/A SHRD AU
TSW-127-17-L-D CONN HEADER 54POS .100" DL GOLD
AD8223BRM IC AMP INST R-R LP 8MSOP
相关代理商/技术参数
参数描述
MCP660T-E/ML 功能描述:运算放大器 - 运放 Triple 60MHz OP w/CS E temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
MCP660T-E/SL 功能描述:运算放大器 - 运放 Triple 60MHz OP E temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
MCP660T-E/ST 功能描述:运算放大器 - 运放 Triple 60MHz OP E temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel
MCP661DM-LD 功能描述:放大器 IC 开发工具 Demo Board MCP661 Line Driver RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V
MCP661-E/SN 功能描述:运算放大器 - 运放 Single 60MHz OP E temp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比(最小值):63 dB 输入补偿电压:1 mV 输入偏流(最大值):10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel