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参数资料
| 型号： | MCP795W10-I/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 7/13页 |
| 文件大小： | 0K |
| 描述： | IC RTCC 64B SRAM WD/DET 14TSSOP |
| 标准包装： | 96 |
| 类型： | 时钟/日历 |
| 特点： | 警报，EEPROM，闰年，方波输出，SRAM，看门狗定时器 |
| 存储容量： | 64B |
| 时间格式： | HH:MM:SS:hh（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | SPI |
| 电源电压： | 1.8 V ~ 5.5 V |
| 电压 - 电源，电池： | 1.3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 14-TSSOP |
| 包装： | 管件 |
2011-2012 Microchip Technology Inc.
Preliminary
DS22280C-page 3
MCP795W1X/MCP795W2X
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings ()
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. VSS ................................................................................................................. -0.6V to +6.5V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias...............................................................................................................-40°C to +85°C
ESD protection on all pins.......................................................................................................................................... 4 kV
TABLE 1-1:
DC CHARACTERISTICS
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
TAMB = -40°C to +85°C
VCC = 1.8V to 3.6V
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Test Conditions
D001
VIH1
High-level input
voltage
.7 VCC
VCC+1
V
D002
VIL1
Low-level input
voltage
-0.3
0.3VCC
VVCC
2.5V
D003
VIL2
-0.3
0.2VCC
VVCC < 2.5V
D004
VOL
Low-level output
voltage
—0.4
V
IOL = 2.1 mA
D005
VOL
—0.2
V
IOL = 1.0 mA, VCC < 2.5V
D006
VOH
High-level output
voltage
VCC -0.5
—
V
IOH = -400
A
D007
ILI
Input leakage current
±1
ACS = VCC, VIN = VSS TO VCC
D008
ILO
Output leakage
current
±1
ACS = VCC, VOUT = VSS TO VCC
D009
CINT
Internal Capacitance
(all inputs and
outputs)
—7
pF
TAMB = 25°C, CLK = 1.0 MHz
D010
ICC Read Operating Current
—
3
mA
VCC = 3.5V; FCLK = 5 MHz
SO = Open
D011
IDD write Write Current
—
5
mA
VCC = 3.6V
D012
IBAT
VBAT Current
—
700
nA
D013
VTRIP
VBAT Change Over
1.3
1.7
V
1.5V typical at TAMB = 25°C
D014
VCCFT VCC Fall Time
300
sFrom VTRIP (max) to VTRIP (min)
D015
VCCRT VCC Rise Time
0
sFrom VTRIP (min) to VTRIP (max)
D016
VBAT
VBAT Voltage Range
1.3
3.6
V
—
D017
ICCS
Standby Current
—
1
A—
Note 1: This parameter is periodically sampled and not 100% tested.
2: With oscillator running.
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