- 您现在的位置：买卖IC网 > PDF目录45316 > MD2202-D96-V3-X (SANDISK CORP) FLASH MEMORY DRIVE CONTROLLER, PDIP32 PDF资料下载
参数资料
| 型号： | MD2202-D96-V3-X |
| 厂商： | SANDISK CORP |
| 元件分类： | 存储控制器/管理单元 |
| 英文描述： | FLASH MEMORY DRIVE CONTROLLER, PDIP32 |
| 封装： | DIP-32 |
| 文件页数： | 6/29页 |
| 文件大小： | 323K |
| 代理商： | MD2202-D96-V3-X |
第1页第2页第3页第4页第5页当前第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
DiskOnChip 2000 DIP
Dynamic Wear-Leveling
TrueFFS uses statistical allocation to perform dynamic wear-leveling on newly written data. This
not only minimizes the number of erase cycles per block, it also minimizes the total number of erase
cycles. Because a block erase is the most time-consuming operation, dynamic wear-leveling has a
major impact on overall performance. This impact cannot be noticed during the first write to flash
(since there is no need to erase blocks beforehand), but it is more and more noticeable as the flash
media becomes full.
Static Wear-Leveling
Areas on the flash media may contain static files, characterized by blocks of data that remain
unchanged for very long periods of time, or even for the whole device lifetime. If wear-leveling
were only applied on newly written pages, static areas would never be cycled. This limited
application of wear-leveling would lower life expectancy significantly in cases where flash memory
contains large static areas. To overcome this problem, TrueFFS forces data transfer in static areas as
well as in dynamic areas, thereby applying wear-leveling to the entire media.
5.2
Power Failure Management
TrueFFS uses algorithms based on “erase after write” instead of "erase before write" to ensure data
integrity during normal operation and in the event of a power failure. Used areas are reclaimed for
erasing and writing the flash management information into them only after an operation is
complete. This procedure serves as a check on data integrity.
The “erase after write” algorithm is also used to update and store mapping information on the flash
memory. This keeps the mapping information coherent even during power failures. The only
mapping information held in RAM is a table pointing to the location of the actual mapping
information. This table is reconstructed during power-up or after reset from the information stored
in the flash memory.
To prevent data from being lost or corrupted, TrueFFS uses the following mechanisms:
When writing, copying, or erasing the flash device, the data format remains valid at all
intermediate stages. Previous data is never erased until the operation has been completed and
the new data has been verified.
A data sector cannot exist in a partially written state. Either the operation is successfully
completed, in which case the new sector contents are valid, or the operation has not yet been
completed or has failed, in which case the old sector contents remain valid.
5.2.1
Error Detection/Correction
TrueFFS implements a Reed-Solomon Error Correction Code (ECC) algorithm to ensure data
reliability. Refer to Section 3.4 for further information on the EDC/ECC mechanism.
14
Data Sheet, Rev. 3.9
91-SR-002-42-8L
相关PDF资料 |
PDF描述 |
|---|---|
| MD2203-D768-V3 | FLASH MEMORY DRIVE CONTROLLER, PDIP32 |
| MD2202-D128-V3-X | FLASH MEMORY DRIVE CONTROLLER, PDIP32 |
| MD2203-D1024-V3-X | FLASH MEMORY DRIVE CONTROLLER, PDIP32 |
| MD2202-D16-V3-X | FLASH MEMORY DRIVE CONTROLLER, PDIP32 |
| MD2534-D2G-X-P | FLASH MEMORY DRIVE CONTROLLER, PBGA115 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MD2202-D96-X | 功能描述:IC DOC2000 96MB 32-DIP RoHS:否 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| MD2202-D96-X-P | 功能描述:IC DOC2000 96MB 32-DIP RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| MD2203 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Disk OnChip 2000 DIP |
| MD2203-D1024 | 功能描述:IC DOC2000 1GB 32-DIP RoHS:否 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| MD2203-D1024-V3 | 功能描述:IC DOC2000 1GB 32-DIP RoHS:否 类别:存储卡，模块 >> 存储器 - 模块 系列:- 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
发布紧急采购，3分钟左右您将得到回复。