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| 型号： | MD7P19130HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 751K |
| 描述： | MOSFET N-CH RF 28V 40W NI780HS-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.93GHz ~ 1.99GHz |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.25A |
| 功率 - 输出： | 130W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780HS-4 |
| 供应商设备封装： | NI-780HS-4 |
| 包装： | 带卷 (TR) |
MD7P19130HR3 MD7P19130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN--PCS/cellular radio and WLL
applications.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,
IDQ
= 1250 mA, Pout
= 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain ? 20 dB
Drain Efficiency ? 30%
Device Output Signal PAR ?
6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset ? --36 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
?
Pout
@ 1 dB Compression Point
?
130 Watts CW
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MD7P19130H
Rev. 2, 8/2010
Freescale Semiconductor
Technical Data
1930--1990 MHz, 40 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MD7P19130HR3
MD7P19130HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MD7P19130HSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MD7P19130HR3
(Top View)
GSA
31RFoutA/VDSA
Figure 1. Pin Connections
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
?
Freescale Semiconductor, Inc., 2008, 2010.
All rights reserved.
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