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参数资料
| 型号： | MF816M-GNCAVXX |
| 元件分类： | PROM |
| 英文描述： | 8M X 16 FLASH 5V PROM CARD, 150 ns, XMA68 |
| 文件页数： | 18/22页 |
| 文件大小： | 148K |
| 代理商： | MF816M-GNCAVXX |
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MITSUBISHI
ELECTRIC
5/22
Feb.1999 Rev2.0
COMMAND DEFINITION
The corresponding memories of the card are set to
read/write mode and the operation is
controlled by the software command written in the
control register.
COMMAND DEFINITION TABLE
First bus cycle
Second bus cycle
Mode
Address
Data in
Mode
Address
Data in
Data out
Read/Reset
1
Write
ZA
FFh( FFFFh)
-
Programme setup/
Programme
2
Write
PA
40(4040)h
Write
PA
PD
-
Erase Setup/
Erase Confirm
2
Write
BA
20(2020)h
Write
BA
D0(D0D0)h
-
Programme
Suspend/Resume
2
Write
PA
B0(B0B0)h
Write
PA
D0(D0D0)h
-
Erase Suspend/
Resume
2
Write
BA
B0(B0B0)h
Write
BA
D0(D0D0)h
-
Read Status
Register
2
Write
ZA
70(7070)h
Read
ZA
-
RD
Clear Status
Register
1
Write
ZA
50(5050)h
-
Read Device
Identifier Code
2
Write
ZA
90(9090)h
Read
DIA
-
DID
Note 3: Indicates the basic functions of commands and should not write another commands.
Refer to the algorithms to operate.
Signal status is defined in function table and bus status.
Parenthesized data shows the data for 16 bit mode operation.
ZA=an address of a memory zone (Please refer to the memory zone)
PA=Programming address
PD=Programming data
BA=An address of a memory block (Please refer to the memory block)
RD=Data of status Register
DIA=Device identifier address
000000h for manufacturer code 000002h for device code
DID=Device identifier data
2MB=manufacturer code : 89 (8989)h
device code : A6h (A6A6)h
Others=manufacturer code : 89 (8989)h
device code : AA (AAAA)h
Read/Reset
The memory in the card is switched to read mode by
writing FFh ( FFFFh for 16 bit operation) into
the control resister. This mode is maintained
until the contents of register are changed. This
mode needs to be written to every
memory zone to which access is required.
Programme Setup/ Programme
The setup programme command sets up the card for
programming. It is applied when 40h (4040h for 16
bit operation) is written to control register.
Programming will take place automatically after
latching the address and data which are applied at
the rising edge of WE#.
The completion of programme can be confirmed by
reading status register.
(For details please refer to the algorithm)
Erase Setup/Erase confirm
The erase setup is a command to set up the memory
block for erasure. Writing setup erase command 20h
(2020h for 16 bit operation) in the control register
followed by erase confirm command D0h (D0D0h
for 16 bit operation) will initiate a erasure
operation. Erasing will take place automatically
after the rising edge of WE# controlled by a internal
timer. The completion of
erase can be confirmed by reading status register.
(For details please refer to the algorithm)
These commands will not erase all the data of a
memory card and should be repeated for all the
required memory blocks. At an eight bit access
mode it should be noticed that the erasure of a
memory block will result in odd byte or even byte
erasure.
Command
Bus
cycles
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