参数资料
型号: MF816M-GNCAVXX
元件分类: PROM
英文描述: 8M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
文件页数: 8/22页
文件大小: 148K
代理商: MF816M-GNCAVXX
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MITSUBISHI
ELECTRIC
16/22
Feb.1999 Rev2.0
SWITCHING CHARACTERISTICS (COMMON MEMORY) ( Ta= 0 to 55 ° C, Vcc=5V+/-5% )
Limits
Min.
Typ.
Max.
tcR
Read cycle time
150
ns
ta(A)
Address access time
150
ns
ta(CE)
Card enable access time
150
ns
ta(OE)
Output enable access time
75
ns
tdis(CE)
Output disable time (from CE#)
75
ns
tdis(OE)
Output disable time (from OE#)
75
ns
ten(CE)
Output enable time (from CE#)
5
ns
ten(OE)
Output enable time (from OE#)
5
ns
tv(A)
Data valid time after address change
0
ns
TIMING REQUIREMENTS (COMMON MEMORY) ( Ta= 0 to 55 ° C, Vcc=5V+/-5% )
Limits
Min.
Typ.
Max.
tcW
Write cycle time
150
ns
t SU (A)
Address setup time
20
ns
trec(WE)
Write recovery time
20
ns
tsu(D-WEH)
Data setup time
50
ns
th(D)
Data hold time
20
ns
t WRR
Write recovery time before read
0
ns
tsu(A-WEH)
Address setup time to write enable high
100
ns
tsu(CE)
Card enable setup time
20
ns
th(CE)
Card enable hold time
20
ns
tw(WE)
Write pulse width
80
ns
t WPH
Write pulse width high
40
ns
t DP
Duration of programming operation
6.5
s
t DE
Duration of erase operation
900
ms
Note 11 : Refer to switching characteristics for read parameters
TIMING DIAGRAM
Common Memory Read
Unit
Symbol
Parameter
Symbol
Unit
Parameter
tdis(CE)
ta(OE)
tcR
t
a(A)
ta(CE)
ten(CE)
ten(OE)
tdis(OE)
tV(A)
OUTPUT VALID
High-Z
An
VIH
Dm
(DOUT)
VOH
VOL
CE#
VIH
VIL
OE#
VIH
VIL
WE# =“ H ” level, REG# =” H ” level
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