参数资料
型号: MG50J1ZS40
元件分类: IGBT 晶体管
英文描述: 50 A, 600 V, N-CHANNEL IGBT
封装: 2-94D2A, 5 PIN
文件页数: 1/6页
文件大小: 388K
代理商: MG50J1ZS40
MG50J1ZS40
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG50J1ZS40
High Power Switching Applications
Motor Control Applications
High input impedance
High speed : tf = 0.35s (max)
trr = 0.15s (max)
Low saturation voltage
: VCE(sat) = 3.5V (max)
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
Reverse voltage
VR
600
V
DC
IC
50
Collector current
1ms
ICP
100
A
DC
IF
50
Forward current
1ms
IFM
100
A
Collector power dissipation (Tc = 25°C)
PC
250
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC, 1 minute)
V
Screw torque (Terminal / mounting)
3 / 3
Nm
JEDEC
JEITA
TOSHIBA
2-94D2A
Weight: 202g
Unit: mm
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