参数资料
型号: MG50J6ES50
元件分类: IGBT 晶体管
英文描述: 50 A, 600 V, N-CHANNEL IGBT
封装: 2-94A2A, 19 PIN
文件页数: 1/6页
文件大小: 478K
代理商: MG50J6ES50
MG50J6ES50
2001-02-22 1/6
TOSHIBA GTR Module Silicon N Channel IGBT
MG50J6ES50
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance.
6 IGBTs built into 1 package.
Enhancement-mode.
High speed : tf = 0.30s (Max.) (IC = 50A)
trr = 0.15s (Max.) (IF = 50A)
Low saturation voltage
: VCE (sat) = 2.70V (Max.) (IC = 50A)
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
2-94A2A
Weight: 505g (Typ.)
Unit: mm
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
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neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
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shall be made at the customer’s own risk.
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000707EAA1
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