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参数资料
| 型号： | MG50J6ES50 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封装： | 2-94A2A, 19 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 478K |
| 代理商： | MG50J6ES50 |
MG50J6ES50
2001-02-22 2/6
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VGES
±20
V
DC
IC
50
Collector current
1ms
ICP
100
A
DC
IF
50
Forward current
1ms
IFM
100
A
Collector power dissipation (Tc = 25°C)
PC
280
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
2 / 3
Nm
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20V, VCE = 0
―
±500
nA
Collector cut-off current
ICES
VCE = 600V, VGE = 0
―
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 5mA, VCE = 5V
5.0
7.0
8.0
V
Collector-emitter saturation
voltage
VCE (sat)
IC = 50A, VGE = 15V
―
2.10
2.70
V
Input capacitance
Cies
VCE = 10V, VGE = 0, f = 1MHz
―
4950
―
pF
Turn-on delay time
td (on)
―
0.08
0.16
Rise time
tr
―
0.12
0.24
Turn-on time
ton
―
0.40
0.80
Turn-off delay time
td (off)
―
0.20
0.40
Fall time
tf
―
0.15
0.30
Switching time
Turn-off time
toff
Inductive load
VCC = 300V
IC = 50A
VGE = ±15V
RG = 24
(Note 1)
―
0.50
1.00
s
Forward voltage
VF
IF = 50 A, VGE = 0
―
2.30
3.00
V
Reverse recovery time
trr
IF = 50 A, VGE = 10 V,
di / dt = 100 A / s
―
0.08
0.15
s
Transistor
―
0.45
Thermal resistance
Rth (j-c)
Diode
―
0.90
°C / W
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