参数资料
型号: MG600J2YS61A
厂商: Powerex Inc
文件页数: 2/6页
文件大小: 0K
描述: IGBT MOD CMPCT DUAL 600V 600A
标准包装: 1
系列: IGBTMOD™
配置: 半桥
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.5V @ 15V,600A
电流 - 集电极 (Ic)(最大): 600A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 125nF @ 10V
功率 - 最大: 2770W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG600J2YS61A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
600 AMPERES/600 VOLTS
ABSOLUTE MAXIMUM RATINGS, T j = 25°C unless otherwise speci?ed
Characteristics
POWER DEVICE JUNCTION TEMPERATURE
STORAGE TEMPERATURE
OPERATING TEMPERATURE RANGE
MOUNTING TORQUE, M5 MOUNTING SCREWS
MOUNTING TORQUE, M6 MAIN TERMINAL SCREWS
MODULE WEIGHT (TYPICAL)
ISOLATION VOLTAGE, AC 1 MINUTE, 60HZ SINUSOIDAL
Symbol
T J
T STG
T OPE
V ISO
MG600J2YS61A
-20 TO 150
-40 TO 125
-20 ^ 100
31
40
375
2500
Units
°C
°C
°C
IN-LB
IN-LB
GRAMS
VOLTS
IGBT INVERTER SECTOR
COLLECTOR-EMITTER VOLTAGE
GATE-EMITTER VOLTAGE
COLLECTOR CURRENT (T C = 25°C)
PEAK COLLECTOR CURRENT (T C = 25°C)
EMITTER CURRENT (T C = 25°C)
PEAK EMITTER CURRENT (T C = 25°C)
COLLECTOR DISSIPATION (T C = 25°C)
V CES
V GES
I C
I CP
I E
I EM
P C
600
±20
600
1200
600
1200
2770
VOLTS
VOLTS
AMPERES
AMPERES
AMPERES
AMPERES
WATTS
IGBT CONTROL SECTOR
CONTROL VOLTAGE (OT)
FAULT INPUT VOLTAGE
FAULT INPUT CURRENT
V D
VF O
IF O
20
20
20
VOLTS
VOLTS
MA
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT INVERTER SECTOR
GATE LEAKAGE CURRENT
COLLECTOR-EMITTER CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
INDUCTIVE LOAD
SWITCHING
TIMES
REVERSE RECOVERY TIME
EMITTER-COLLECTOR VOLTAGE
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
T D(ON)
T OFF
T F
T RR
V EC
V GE = ±20V, V CE = 0V
V GE = 10V, V CE = 0V
V CE = 600V, V GE = 0V
V CE = 5V, I C = 600MA
V GE = 15V, I C = 600A, T J = 25°C
V GE = 15V, I C = 600A, T J = 125°C
V CE = 10V, V GE = 0V, F = 1MHZ
V CC = 300V, I C = 600A,
V GE = ±15V, R G = 5.1 Ω
I E = 600A
6.0
0.1
7.0
2.2
125
2.2
-4 / +3
100
1.0
8.0
2.5
2.8
1.0
2.0
0.5
0.5
2.6
MA
NA
MA
VOLTS
VOLTS
VOLTS
NF
μS
μS
μS
μS
VOLTS
2
5/05
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MG600Q2YS60A 功能描述:IGBT MOD CMPCT 1200V 600A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B