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参数资料
| 型号： | MGB15N38CLT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 350 V, N-CHANNEL IGBT |
| 封装： | D2PAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 41K |
| 代理商： | MGB15N38CLT4 |
MGP15N38CL, MGB15N38CL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
(IC = 1.0 mA, TJ = –40°C to 175°C)
V(BR)CES
350
380
410
Vdc
Zero Gate Voltage Collector Current
(VCE = 300 V, VGE = 0 V)
(VCE = 300 V, VGE = 0 V, TJ = 150°C)
ICES
–
10
150
Adc
Gate–Emitter Clamp Voltage
(IG = 5.0 mA)
V(BR)GES
17
–
22
Vdc
Gate–Emitter Leakage Current
(VGE = 10 V)
IGES
–
10
Adc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VGE = VCE, IC = 1.0 mA)
Threshold Temperature Coefficient (Negative)
VGE(th)
1.3
–
1.8
4.4
2.1
–
Vdc
mV/
°C
Collector–to–Emitter On–Voltage
(VGE = 3.5 V, IC = 6.0 A)
(VGE = 4.0 V, IC = 10 A, TJ = 150°C)
VCE(on)
–
2.0
1.8
Volts
Forward Transconductance
(VCE = 5.0 V, IC = 10 A)
gfe
8.0
19
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 V V
0 V
Cies
–
TBD
–
pF
Output Capacitance
(VCC = 15 V, VGE = 0 V,
f = 1.0 MHz)
Coes
–
TBD
–
Transfer Capacitance
f = 1.0 MHz)
Cres
–
TBD
–
SWITCHING CHARACTERISTICS (Note 1.)
Turn–Off Delay Time
(VCC = 300 V, IC = 6.5 A,
td(off)
–
TBD
–
mSec
Fall Time
(VCC 300 V, IC 6.5 A,
RG = 1.0 k, L = 300 mH)
tf
–
TBD
–
Turn–On Delay Time
(VCC = 10 V, IC = 6.5 A,
td(on)
–
TBD
–
mSec
Rise Time
(VCC 10 V, IC 6.5 A,
RG = 1.0 k, RL = 1.0 )
tr
–
TBD
–
Gate Charge
(V
300 V I
15 A
QT
–
TBD
–
nC
(VCC = 300 V, IC = 15 A,
VGE = 5.0 V)
Q1
–
TBD
–
VGE = 5.0 V)
Q2
–
TBD
–
1. Pulse Test: Pulse Width
≤ 300 S, Duty Cycle ≤ 2%.
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