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参数资料
| 型号： | MGF0805A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
1
DESCRIPTION
The MGF0805A, GaAs FET with an N-channel schottky
Gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
High output power : Po = 36.5 dBm (typ.)
High power added efficiency : ηadd = 50 % (typ.)
Hermetic package
Designed for use in Class AB linear amplifiers
APPLICATIONS
L/S band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds = 10 V Ids = 400 mA Rg = 100
Packaging Tape & Reel (1000 pcs)
°C
- 55 to +150
Storage temperature
Tstg
°C
175
Channel temperature
Tch
mA
21
Forward gate current
IGF
mA
-10
Reverse gate current
IGR
W
21
Total power dissipation
PT
A
2.5
Drain current
ID
V
-5
Gate to Source Voltage
VGS
V
15
Drain to Source Voltage
VDS
Unit
Ratings
Parameter
Symbol
Absolute maximum ratings (Ta = 25° C)
°C/W
7
5
–
Vf Method
Thermal resistance *1
Rth(ch-c)
dB
–
14.5
13.0
VDS=10V, IDQ=400mA, f=1.9GHz
Linear power gain
GLP
%
–
50
–
Power added efficiency
ηadd
dBm
–
36.5
35.0
VDS = 10 V, IDQ = 400 mA,
f = 1.9 GHz, Pin = 22 dBm
Output power
Po
mS
–
1000
–
VDS = 10 V, IDS = 400 mA
Transconductance
gm
V
-2.0
-1.1
-0.5
VDS = 3 V, IDS = 10 mA
Gate to source cut-off
voltage
VGS(off)
mA
–
1800
–
VDS = 3 V, VGS = 0 V
Saturated drain current
IDSS
Max.
Typ.
Min.
Unit
Limits
Test conditions
Parameter
Symbol
Electrical characteristics ( Ta = 25° C)
*1 : Channel to case
Specifications are subject to change without notice.
4.2
m
4.0 mm
Package Outline
(GF-50 Style)
Gate Mark
Round Corner
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0805A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0840G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0843G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0846G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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