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参数资料
| 型号： | MGF0805A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
8
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted
efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions
or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit
of redundancy design, malfunction prevention design and other safety-related designs, to prevent
breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses
or other problems, thereby upholding the highest levels of safety in the products when in use by customers.
Matters of Importance when Using these Materials
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Electric semiconductors best suited to their specific use applications. Please be aware, however, that the
technical information contained in these materials does not comprise consent for the execution or use of
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charts, programs, algorithms or other applied circuit examples described in these materials, or for the
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0805A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0840G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0843G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0846G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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