参数资料
型号: MGF0805A
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: HERMETIC SEALED, GF-50, 3 PIN
文件页数: 7/8页
文件大小: 114K
代理商: MGF0805A
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
7
Bias condition: VD = 10 V, IDQ = 400 mA,
Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
0
5
10
15
20
25
30
35
40
10
15
20
25
30
0
10
20
30
40
50
60
70
80
8
9
10
11
12
13
14
15
16
Pin (dBm)
Gain
(dB)
Pout
(dBm)
PAE
( % )
Pout
Gain
PAE
0
5
10
15
20
25
30
35
40
10
15
20
25
30
0
10
20
30
40
50
60
70
80
8
9
10
11
12
13
14
15
16
8
9
10
11
12
13
14
15
16
Pin (dBm)
Gain
(dB)
Pout
(dBm)
PAE
( % )
Pout
Gain
PAE
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
Pout (dBm)
0
100
200
300
400
500
600
700
ACP
(dBc)
ID
(mA)
ACP
NACP
ID
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
Pout (dBm)
0
100
200
300
400
500
600
700
ACP
(dBc)
ID
(mA)
ACP
NACP
ID
Example of Circuit Schematic and Characteristics : f = 3.5 GHz
Z11 to Z26 : Microstrip line ( L
× W, Unit: mm )
Z11 : 1.0
× 0.9
Z14 : 3.7
× 0.9
Z21 : 1.0
× 0.9
Z24 : 4.7
× 0.9
Z12 : 0.8
× 0.9
Z15 : 3.0
× 0.9
Z22 : 0.8
× 0.9
Z25 : 3.0
× 0.9
Z13 : 10.8
× 0.9
Z16 : 13.3
× 0.5
Z23 : 9.8
× 0.9
Z26 : 13.3
× 0.5
PCB : BT Resin,
εr = 3.4, Substrate thickness = 0.4 mm
0.5pF
1pF
100
47uF
Z26
Z16
Z15
Z14
Z13
Z12
Z11
Z25
Z22
Z21
20pF
0.5pF
20pF
1000pF
51
-VG
+VD
MGF0805A
1pF
1.5pF
Z24
Z23
0.5pF
Input
Output
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