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参数资料
| 型号： | MGF0805A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
5
ID
EVM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
15
20
25
30
35
Pout (dBm )
EVM
(
%
)
0
100
200
300
400
500
600
700
ID
(
m
A
]
Bias condition:
VD = 10 V,
IDQ = 400 mA
Modulation signal:
IEEE.802.16 WiMAX A,
Downlink, 64QAM3/4
Example of Circuit Schematic and Characteristics : f = 2.6 GHz
Output
Input
1pF
Z23
Z24
1.5pF
MGF0805A
+VD
-VG
51
1000pF
20pF
Z21
Z22
Z25
Z11
Z12
Z13
Z14
Z15
Z26
4.7uF
100
2pF
Z11 to Z26 : Microstrip line ( L
× W, Unit: mm )
Z11 : 1.0
× 0.9
Z14 : 3.0
× 0.9
Z22 : 2.1
× 0.9
Z25 : 3.0
× 0.9
Z12 : 0.8
× 0.9
Z15 : 17.6
× 0.5
Z23 : 3.2
× 0.9
Z26 : 17.6
× 0.5
Z13 : 14.5
× 0.9
Z21 : 1.0
× 0.9
Z24 : 10.0
× 0.9
PCB : BT Resin,
εr = 3.4, Substrate thickness = 0.4 mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0805A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0840G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0843G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0846G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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