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参数资料
| 型号： | MGF0805A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, GF-50, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 114K |
| 代理商： | MGF0805A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Mitsubishi Electric
Sept. / 2009
2
Outline Drawing
(1) Gate
(2) Drain
(3) Source unit: mm
BACK SIDE PATTERN
4.00
0.80
1.15
0.30
4.2
0
Reference Plane
Gate Mark
Round Corner
(1)
(2)
1.2
0
2.8
0
0.80
2.00
4.0
0
3.80
Gate Mark
(1)
(2)
(3)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0805A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0840G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0843G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0846G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaN HEMT (small signal gain stage) |
| MGF0904 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
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