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参数资料
| 型号： | MGC15N43CL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 460 V, N-CHANNEL IGBT |
| 封装： | DIE |
| 文件页数： | 2/8页 |
| 文件大小： | 56K |
| 代理商： | MGC15N43CL |
MGP15N43CL, MGB15N43CL, MGC15N43CL
http://onsemi.com
2
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ t150°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C
EAS
300
150
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Thermal Resistance, Junction to Ambient
TO–220
RθJA
62.5
D2PAK
RθJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40°C to 175°C
400
430
460
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0, TJ = 25°C
–
40
ADC
VCE = 300 V,
VGE = 0, TJ = 150°C
–
200
Reverse Collector–Emitter Leakage Current
IECS
VCE = –24 V
–
1.0
mA
Gate–Emitter Clamp Voltage
BVGES
IG = 5 mA
17
–
22
VDC
Gate–Emitter Leakage Current
IGES
VGE = 10 V
–
2.0
ADC
ON CHARACTERISTICS*
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.2
1.5
2.1
VDC
Threshold Temperature Coefficient (Negative)
–
4.4
–
mV/
°C
Collector–to–Emitter On–Voltage
VCE(on)
IC = 6 A, VGE = 4 V
–
1.8
VDC
Collector–to–Emitter On–Voltage
VCE(on)
IC = 10 A,
VGE = 4.5 V,
TJ = 150°C
–
1.8
VDC
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 15 V
–
950
–
pF
Output Capacitance
COSS
VGE = 0 V
–
100
–
Transfer Capacitance
CRSS
f = 1 MHz
–
8.0
–
*Pulse Test: Pulse Width
v 300 S, Duty Cycle v 2%.
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