参数资料
型号: MGD623N
厂商: SANKEN ELECTRIC CO LTD
元件分类: IGBT 晶体管
英文描述: 50 A, 600 V, N-CHANNEL IGBT
封装: TO-3P, PIN
文件页数: 5/10页
文件大小: 0K
代理商: MGD623N
IGBT
MGD623N
July, 2009
Sanken Electric Co.,Ltd.
T04-002EA-090721
http://www.sanken-ele.co.jp/en/
Characteristic Curves
Capacitanc e - VCE (typical)
1
10
100
1000
10000
0
1020
304050
VCE (V)
C
ap
aci
ta
nc
e
(p
F
)
Tc=25℃
f=1MHz
VGE=0V
Cies
Coes
Cres
VCE,VGE - Qg (typical)
0
10
20
30
40
0
2040
6080
Qg (nC)
V
C
E
1
0
V
),
V
G
E
(
V
)
VCE
VGE
Tc=25℃
RL=6Ω
SW Time - IC (typical)
10
100
1000
110
100
IC (A)
S
W
T
im
e
(ns
)
Tc = 25℃
td(off)
tf
tr
td(on)
Inductive Load
VCE=300V VG=15V
Rg=39Ω
SW Time - IC (typical)
10
100
1000
110
100
IC (A)
SW
T
im
e
(n
s)
Tc = 125℃
td(off)
tf
tr
td(on)
Inductive Load
VCE=300V VG=15V
Rg=39Ω
SW Time - RG (typical)
10
100
1000
110
100
RG (Ω)
S
W
T
im
e
(ns
)
Tc = 25℃
td(on)
tr
td(off)
tf
Inductive Load
IC=50A VCE=300V
VG=15V
SW Time - RG (typical)
10
100
1000
110
100
RG (Ω)
S
W
T
im
e
(ns
)
Tc =125℃
td(on)
tr
td(off)
tf
Inductive Load
IC=50A VCE=300V
VG=15V
相关PDF资料
PDF描述
MGF0840G S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
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MGF0912A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
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