参数资料
型号: MGF0952P
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: PLASTIC, LEADLESS PACKAGE-3
文件页数: 2/6页
文件大小: 56K
代理商: MGF0952P
(2/6)
Mitsubishi Electric
June/2004
MGF0952P TYPICAL CHARACTERISTICS
Po,Gp,PAE vs. Pin
10
15
20
25
30
35
40
10
15
20
25
30
Pin(dBm)
Gp(dB)
Po(dBm)
0
10
20
30
40
50
60
PAE(%)
VD=10V
Idq=0.7A
f=2.15GHz
10
15
20
25
30
35
40
45
2.00
2.05
2.10
2.15
2.20
2.25
2.30
Freq(GHz)
Po(dBm)
Pin=5dBm
Pin=10dBm
Pin=15dBm
Pin=20dBm
Pin=25dBm
VD=10(V)
Idq=0.7(A)
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相关代理商/技术参数
参数描述
MGF0952P_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF100-30 制造商:SMC Corporation of America 功能描述:CYL, GUIDE 100MM BORE
MGF1302 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:LOW NOISE GaAs FET