- 您现在的位置：买卖IC网 > PDF目录95933 > MGF0952P S BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | MGF0952P |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | PLASTIC, LEADLESS PACKAGE-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 56K |
| 代理商： | MGF0952P |
(6/6)
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however,
there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of
this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction
prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting
in accidents involving people, fi res, social losses or other problems, thereby upholding the highest levels of safety in the
products when in use by customers.
Matters of Importance when Using these Materials
1. These materials are designed as reference materials to ensure that all cus tomers purchase Mitsubishi Electric
semiconductors best suited to their specific use applications. Please be aware, however, that the technical information
contained in these materials does not comprise consent for the execution or use of intellectual property rights or other
rights owned by Mitsubishi Electric Corporation.
2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts,
programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the
rights of third-party owners resulting from such use.
3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at
the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in
the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric
semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an
authorized dealer.
4. Every possible effort has been made to ensure that the information described in these materials is fully accurate.
However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these
materials.
5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in
these materials, assessments should not be limited to only the technical contents, programs and algorithm units.
Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer
assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept
responsibility for the propriety of application.
6. The products described in these materials, with the exception of special mention concerning use and reliability, have
been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products
have not been designed and manufactured with the purpose of application in machinery or systems that will be used
under conditions that can affect human life, or in machinery or systems used in social infras tructure that demand a
particularly high degree of reliability. When considering the use of the products described in these materials in
transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear
power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi
Electric directly or an authorized dealer.
7. When considering use of products for purposes other than the specific applications described in these materials,
please inquire at Mitsubishi Electric or an authorized dealer.
8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials.
9. Please direct any inquiries regarding further deta ils of these materials, or any other comments or matters of attention,
to Mitsubishi Electric or an authorized dealer.
相关PDF资料 |
PDF描述 |
|---|---|
| MGF0953P | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF1302 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1303B | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGF1323 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MGFC45V2527 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGF0952P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF100-30 | 制造商:SMC Corporation of America 功能描述:CYL, GUIDE 100MM BORE |
| MGF1302 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:LOW NOISE GaAs FET |
发布紧急采购，3分钟左右您将得到回复。