参数资料
型号: MGF0952P
元件分类: 功率晶体管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: PLASTIC, LEADLESS PACKAGE-3
文件页数: 3/6页
文件大小: 56K
代理商: MGF0952P
(3/6)
Mitsubishi Electric
June/2004
MGF0952P TYPICAL CHARACTERISTICS
IM3, IM5 vs. Po
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
20
25
30
35
Po(Total) (dBm)
IM3,
IM5
(dBc)
VD=10V
Idq=0.7A
f1=2.15GHz
f2=2.16GHz
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相关代理商/技术参数
参数描述
MGF0952P_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF100-30 制造商:SMC Corporation of America 功能描述:CYL, GUIDE 100MM BORE
MGF1302 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:LOW NOISE GaAs FET