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参数资料
| 型号： | MGFC36V7785A-51 |
| 元件分类： | 功率晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 文件页数： | 1/2页 |
| 文件大小： | 126K |
| 代理商： | MGFC36V7785A-51 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V7785A
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
.
DESCRIPTION
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=7.7~8.5GHz
High power gain
GLP = 8 dB (TYP.) @ f=7.7~8.5GHz
High power added efficiency
P.A.E. = 29 % (TYP.) @ f=7.7~8.5GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 7.7~8.5 GHz band power amplifier
item 51 : 7.7~8.5 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A)
Refer to Bias Procedure
RG= 100 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
3.75
A
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21
mA
PT
Total power dissipation *1
25
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25 deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Limits
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
3.75
A
gm
Transconductance
VDS=3V, ID=1.1A
-
1
-
S
VGS(off)
Gate to source cut-off voltage
VDS=3V, ID=10mA
-
-4.5
V
P1dB
Output power at 1dB gain compression
35
36.5
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=1.2A, f=7.7~8.5GHz
7
8
-
dB
ID
Drain current
-
1.8
A
P.A.E.
Power added efficiency
-
29
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance
*2
Delta Vf method
-
5
6
deg.C/W
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=8.5GHz, Delta f=10MHz
*2 : Channel to case
MITSUBISHI
Oct-'03
ELECTRIC
The MGFC36V7785A is an internally impedance-matched
GaAs power FET especially designed for use in 7.7 ~ 8.5
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
Parameter
Test conditions
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
Symbol
Unit
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4.5
+/-0.4
0.2
GF-8
1.6
2MIN
(2)
12.9
+/-0.2
2MIN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.1
2.6
+/-0.2
R-1.6
(3)
(2)
11.3
0.6 +/-0.15
Unit : millimeters
相关PDF资料 |
PDF描述 |
|---|---|
| MGFC36V7785A-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC38V3642-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC38V3642-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC38V5964-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC38V6472-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC36V7785A61 | 制造商:Mitsubishi Electric 功能描述: |
| MGFC38V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5867_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC38V5964_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
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