型号: | MGFC42V6472-51 |
元件分类: | 功率晶体管 |
英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
封装: | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
文件页数: | 2/2页 |
文件大小: | 60K |
代理商: | MGFC42V6472-51 |
相关PDF资料 |
PDF描述 |
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MGFC42V6472A-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC42V6472A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC42V6472A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC42V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
MGFC42V7177-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
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MGFC42V6472A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET |
MGFC42V7177 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
MGFC42V7785A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
MGFC42V7785A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
MGFC4419G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAs HEMT Chip |