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参数资料
| 型号： | MGFC45V3642A |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 265K |
| 代理商： | MGFC45V3642A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V3642A is an internally impedance-matched
GaAs power FET especially designed for use in 3.6 - 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier
item 51 : 3.6 - 4.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Symbol
Parameter
Ratings
Unit
Mitsubishi Electric Corporation puts the maximum effort into
VGDO
Gate to drain voltage
-15
V
making semiconductor products better and more reliable,
VGSO
Gate to source voltage
-15
V
but there is always the possibility that trouble may occur
ID
Drain current
25
A
with them. Trouble with semiconductors may lead to personal
IGR
Reverse gate current
-80
mA
injury, fire or property damage. Remember to give due
IGF
Forward gate current
168
mA
consideration to safety when making your circuit designs,
PT *1
Total power dissipation
150
W
with appropriate measures such as (1)placement of
Tch
Channel temperature
175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
Tstg
Storage temperature
-65 / +175
deg.C
material or (3)prevention against any malfunction or mishap.
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
24
-
A
gm
Transconductance
VDS = 3V , ID = 8A
-
8
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 160mA
-2
-
-5
V
P1dB
Output power at 1dB gain
compression
44
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz
10
11
-
dB
ID
Drain current
-
8
-
A
P.A.E.
Power added efficiency
-
36
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
0.8
1
deg.C/W
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz
*3 : Channel-case
June/2004
MITSUBISHI
ELECTRIC
24 +/- 0.3
16.7
20.4 +/- 0.2
4.
3
+
/-
0.
4
1.
4
G F -38
2M
IN
R1.2
O U T L IN E
8.
0
+
/-
0.
2
17
.4
+
/-
0.
2
2M
IN
(1)
(1) gate
(2) s ourc e(flange)
(3)drain
(3)
0.
1
+
/-
0.
05
2.
4
+
/-
0.
2
(2)
unit : mm
0.6 +/- 0.15
相关PDF资料 |
PDF描述 |
|---|---|
| MGFC45V4450A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC45V5053-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC45V5867 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC45V5964A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC45V3642A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5053A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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