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参数资料
| 型号： | MGFC45V3642A |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 265K |
| 代理商： | MGFC45V3642A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3642A
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
3.50
0.51
165
3.71
42
0.05
-21
0.39
-29
3.60
0.55
125
3.82
14
0.06
-52
0.29
-56
3.70
0.56
93
3.84
-15
0.07
-80
0.22
-94
3.80
0.54
67
3.81
-41
0.07
-107
0.21
-142
3.90
0.47
40
3.86
-68
0.08
-134
0.23
-177
4.00
0.37
5
3.87
-97
0.09
-162
0.26
149
4.10
0.27
-42
3.83
-125
0.09
169
0.26
122
4.20
0.26
-117
3.64
-156
0.09
141
0.21
93
4.30
0.40
-174
3.25
174
0.09
108
0.09
63
June/2004
P1dB,GLP vs. f
41
42
43
44
45
46
47
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
FREQUENCY f (GHz)
OUTPUT
POWER
P1dB
(dBm)
10
12
14
16
18
20
22
LINEAR
POWER
GAIN
GLP
(dB)
VDS=10V
IDS=8A
P1dB
GLP
Po, P.A.E. vs. Pin
25
30
35
40
45
50
20
25
30
35
40
INPUT POWER Pin (dBm)
OUTPUT
POWER
Po
(dBm)
0
20
40
60
80
100
VDS=10V
IDS=8A
f=3.9GHz
Po
add
POWER
ADDED
EFFICIENCY
(%)
Po,IM3 vs. Pin
26
28
30
32
34
36
38
40
17
19
21
23
25
27
29
31
INPUT POWER Pin (dBm S.C.L.)
OUTPUT
POWER
Po
(dBm
S.C.L.)
-60
-50
-40
-30
-20
-10
0
10
VDS=10V
IDS=8A
f1=4.20GHz
f2=4.21GHz
2-tone test
IM3
Po
IM3
(dBc)
MITSUBISHI
ELECTRIC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC45V3642A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5053A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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