参数资料
型号: MGFC45V5964A
元件分类: 功率晶体管
英文描述: C BAND, GaAs, N-CHANNEL, RF POWER, JFET
封装: HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
文件页数: 2/3页
文件大小: 259K
代理商: MGFC45V5964A
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V5964A
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25 Deg.C)
S PARAMETERS (Ta=25 Deg.C , VDS=10V , IDS=8A)
S Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
5.90
0.61
159
2.957
-44
0.04
-117
0.21
160
6.00
0.55
138
3.071
-62
0.05
-134
0.22
134
6.10
0.48
115
3.119
-81
0.06
-152
0.25
112
6.20
0.41
92
3.148
-100
0.07
-167
0.26
91
6.30
0.34
65
3.143
-118
0.08
175
0.26
73
6.40
0.28
36
3.122
-137
0.09
160
0.25
55
MITSUBISHI
June/2004
ELECTRIC
P1dB ,GLP vs. f
41
42
43
44
45
46
47
5.8
5.9
6.0
6.1
6.2
6.3
6.4
6.5
FERQUENCY (GHz)
OUTPUT
POWER
P1dB
(dBm)
8
9
10
11
12
13
14
LINEAR
POWER
GAIN
GLP(dB)
P1dB
GLP
VDS=10(V)
IDS=8(A)
Po IM3 vs. Pin
20
22
24
26
28
30
32
34
36
38
40
42
44
18
20
22
24
26
28 30 32 34 36
INPUT POWER Pin(dBm S.C.L.)
OUTPUT
POWER
Po
(dBm
S.C.L.)
-60
-50
-40
-30
-20
-10
0
IM3(dBc)
Po
IM3
VDS=10(V)
IDS=8(A)
f=6.4(GHz)
Delta f=10(MHz)
Po , PAE vs. Pin
25
30
35
40
45
50
20
25
30
35
40
45
INPUTPOWER Pin(dBm)
OUTPUT
POWER
Po(dBm)
0
10
20
30
40
50
POWER
ADDED
EFFICIECY
PAE
(%)
VDS=10(V)
IDS=8(A)
f=6.15(GHz)
Po
PAE
相关PDF资料
PDF描述
MGFC45V6472A C BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGFC47A7785 C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MGFC47V5864 C BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGFK25M4045-01 KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGFK30V4045-01 KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
MGFC45V5964A_04 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V6472A 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC45V6472A_04 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MGFC47A4450 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET
MGFC47A7785 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET