- 您现在的位置：买卖IC网 > PDF目录95938 > MGFS45V2527A S BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | MGFS45V2527A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 283K |
| 代理商： | MGFS45V2527A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2527A
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFS45V2527 is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.5 - 2.7 GHz band power amplifier
item 51 : 2.5 - 2.7 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 6.5 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them.Trouble with semiconductors may lead to personal
ID
Drain current
22
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-61
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
76
mA
with appropriate measures such as (1)placement of
PT *1
Total power dissipation
88
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Saturated drain current
VDS = 3V , ID = 60mA
-
-5
V
P1dB
Output power at 1dB gain
compression
44
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz
11
12
-
dB
ID
Drain current
-
7.5
-
A
P.A.E.
Power added efficiency
-
45
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
1.5
deg.C/W
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,dfelta f=5MHz
*3 : Channel-case
June-'04
MITSUBISHI
ELECTRIC
7PKVOKNNKOGVGTUKPEJGU
r
r
r
r
r
r
)(
/+
0
/+
0
rr
176.+0'&4#9+0)
/+
0
/+
0
r
r
rr
r
r
r
5174%'(.#0)'
)#6'
&4#+0
相关PDF资料 |
PDF描述 |
|---|---|
| MGFS45V2735 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS48B2122 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS48V2527 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGFS52B2122 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX36V0717-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFS45V2527A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7-3.5 GHz BAND / 30W |
| MGFS45V2735 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2735_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET |
| MGFS45V2735_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7-3.5 GHz BAND / 30W |
| MGFS48B2122 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.11 - 2.17 GHz BAND 60W GaAs FET |
发布紧急采购，3分钟左右您将得到回复。