参数资料
| 型号： | MIC2166YMME TR |
| 厂商： | Micrel Inc |
| 文件页数： | 13/28页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR PWM HYBRID 10TSOP |
| 标准包装： | 2,500 |
| 系列： | Hyper Speed Control™ |
| PWM 型： | 混合物 |
| 输出数： | 1 |
| 频率 - 最大： | 750kHz |
| 占空比： | 82% |
| 电源电压： | 4.5 V ~ 28 V |
| 降压： | 无 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽）裸露焊盘 |
| 包装： | 带卷 (TR) |
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Micrel, Inc.
Using the typical V CL value of 133mV, the current limit
value is roughly estimated as:
MIC2166
rise. It is also recommended to connect SW pin directly
to the drain of the low-side MOSFET to accurately sense
the MOSFETs R DS(ON) .
I CL ≈
133mV
R DS(ON)
MOSFET Gate Drive
The MIC2166 high-side drive circuit is designed to
switch an N-Channel MOSFET. The typical application
For designs where the current ripple is significant
compared to the load current I OUT , or for low duty-cycle
operation, calculating the current limit I CL should take
into account that one is sensing the peak inductor
current and that there is a blanking delay of
approximately 150ns.
schematic shows a bootstrap circuit, consisting of D1 (a
Schottky diode is recommended) and C BST . This circuit
supplies energy to the high-side drive circuit. Capacitor
C BST is charged while the low-side MOSFET is on and
the voltage on the SW pin is approximately 0V. When
the high-side MOSFET driver is turned on, energy from
C BST is used to turn the MOSFET on. As the high-side
MOSFET turns on, the voltage on the SW pin increases
V OUT × t DLY
I CL =
133mV
R DS(ON)
Δ I L(PP) =
+
L
V OUT × (1 ? D)
f SW × L
?
Δ I L(PP)
2
(2)
(3)
to approximately V IN . Diode D1 is reversed biased and
C BST floats high while continuing to keep the high-side
MOSFET on. The bias current of the high-side driver is
less than 10mA so a 0.1 μ F to 1 μ F is sufficient to hold
the gate voltage with minimal droop for the power stroke
(high-side switching) cycle, i.e., Δ BST = 10mA x
1.67 μ s/0.1 μ F = 167mV. When the low-side MOSFET is
where:
V OUT = Output voltage
t DLY = Current-limit blanking time, 150ns typical
Δ I L(PP) = Inductor current ripple peak-to-peak value
D = Duty Cycle
f SW = Switching frequency
The MOSFET R DS(ON) varies between 30% to 40% with
temperature; therefore, it is recommended to add 50%
margin to I CL in the above equation to avoid false current
limiting due to increased MOSFET junction temperature
turned back on, C BST is recharged through D1. A small
resistor R G at BST pin can be used to slow down the
turn-on time of the high-side N-channel MOSFET.
The drive voltage is derived from the internal linear
regulator V DD . The nominal low-side gate drive voltage is
V DD and the nominal high-side gate drive voltage is
approximately V DD – V DIODE , where V DIODE is the voltage
drop across D1. A dead-time of approximate 30ns delay
between the high-side and low-side driver transitions is
used to prevent current from simultaneously flowing
unimpeded through both MOSFETs.
September 2010
13
M9999-092410-C
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| MIC2168 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:1MHz PWM Synchronous Buck Control IC |
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| MIC2168ABMM | 功能描述:IC REG CTRLR BUCK PWM VM 10-MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
| MIC2168ABMM TR | 功能描述:IC REG CTRLR BUCK PWM VM 10-MSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:4,000 系列:- PWM 型:电压模式 输出数:1 频率 - 最大:1.5MHz 占空比:66.7% 电源电压:4.75 V ~ 5.25 V 降压:是 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:无 工作温度:-40°C ~ 85°C 封装/外壳:40-VFQFN 裸露焊盘 包装:带卷 (TR) |
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