参数资料
型号: MIC2166YMME TR
厂商: Micrel Inc
文件页数: 2/28页
文件大小: 0K
描述: IC REG CTRLR PWM HYBRID 10TSOP
标准包装: 2,500
系列: Hyper Speed Control™
PWM 型: 混合物
输出数: 1
频率 - 最大: 750kHz
占空比: 82%
电源电压: 4.5 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)裸露焊盘
包装: 带卷 (TR)
Micrel, Inc.
Ordering Information
MIC2166
Part Number
MIC2166YMME
Voltage
Adjustable
Switching Frequency
600kHz
Junction Temperature Range
–40° to +125°C
Package
10-pin ePad MSOP
Lead Finish
Pb-Free
Pin Configuration
10-Pin ePad MSOP (MME)
Pin Description
Pin
Number
1
2
3
4
5
6
7
8
Pin Name
FB
PGOOD
EN
VIN
VDD
DL
PGND
DH
Pin Function
Feedback (Input): Input to the transconductance amplifier of the control loop. The FB pin is regulated to
0.8V. A resistor divider the output an FB is used to set the desired output voltage.
Power Good (Output): Open Drain Output. The PGOOD pin is externally tied with a resistor to VDD.
High output when V OUT >90% nominal.
Enable (Input): A logic level control of the output. The EN pin is CMOS-compatible. Logic high = enable,
logic low = shutdown. In the off state, supply current of the device is greatly reduced (typically 5μA). The
EN pin should not be left open. Connect to VIN if sequencing is not required.
Supply Voltage: Input voltage for the internal +5V linear regulator. The VIN operating voltage range is
from 4.5V to 28V. A 0.1μF capacitor between VIN and the ground is required.
5V Internal Linear Regulator (Output): VDD is the external MOSFET gate drive supply voltage and an
internal supply bus for the IC. VDD is created by internal LDO from VIN. When VIN <+5.5V, VDD Should
be tied to VIN. A 2.2μF (minimum) ceramic capacitor from VDD to GND is recommended for clean
operation.
Low-Side Gate Drive (Output): High-current driver output for external low-side MOSFET. The DL driving
voltage swings from ground to VDD.
Power Ground. PGND is the ground path for the MIC2166 buck converter power stage. The PGND pin
connects to the sources of low-side N-Channel MOSFETs, the negative terminals of input capacitors,
and the negative terminals of output capacitors. The loop for the power ground should be as small as
possible and separate from the Signal ground (GND) loop.
High-Side Gate Drive (Output): High-current driver output for external high-side MOSFET. The DH
driving voltage is floating on the switch node voltage (SW). It swings from ground-to-VDD minus the
diode drop.
September 2010
2
M9999-092410-C
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