参数资料
型号: MIC2199BML TR
厂商: Micrel Inc
文件页数: 9/14页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 12-MLF
标准包装: 5,000
PWM 型: 电流模式
输出数: 1
频率 - 最大: 330kHz
占空比: 85%
电源电压: 4.5 V ~ 32 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 12-VFDFN 裸露焊盘,12-MLF?
包装: 带卷 (TR)
其它名称: MIC2199BMLTR
MIC2199BMLTR-ND
V OUT × (V IN(max) - V OUT )
Micrel, Inc.
Applications Information
Following applications information includes component selec-
tion and design guidelines.
Inductor Selection
Values for inductance, peak, and RMS currents are required 
to select the output inductor. The input and output voltages
and the inductance value determine the peak-to-peak induc-
tor ripple current. Generally, higher inductance values are
used with higher input voltages. Larger peak-to-peak ripple
currents will increase the power dissipation in the inductor
and MOSFETs. Larger output ripple currents will also require 
more output capacitance to smooth out the larger ripple cur-
rent. Smaller peak-to-peak ripple currents require a larger 
inductance value and therefore a larger and more expensive
inductor. A good compromise between size, loss and cost is
to set the inductor ripple current to be equal to 20% of the 
maximum output current.
The inductance value is calculated by the equation below.
L =
V IN(max) × f S × 0.2 × I OUT(max)
where:
f S  = switching frequency
0.2 = ratio of AC ripple current to DC output current
MIC2199.
Copper loss in the inductor is calculated by the equation
below:
P INDUCTORCu = I INDUCTOR(rms) 2 × R WINDING
The resistance of the copper wire, R WINDING , increases with
temperature. The value of the winding resistance used should
be at the operating temperature.
R WINDING(hot) = R WINDING(20 ° C) × ( 1 + 0.0042 × (T HOT ? T 20 ° C ) )
where:
T HOT = temperature of the wire under operating load
T 20°C = ambient temperature
R WINDING(20°C) is room temperature winding
resistance
  (usually specified by the manufacturer)
Current-Sense Resistor Selection
Low inductance power resistors, such as metal film resistors 
should be used. Most resistor manufacturers make low induc-
tance resistors with low temperature coefficients, designed 
specifically for current-sense applications. Both resistance 
and power dissipation must be calculated before the resis-
tor is selected. The value of R SENSE is chosen based on the
maximum output current and the maximum threshold level.
The power dissipated is based on the maximum peak output
current at the minimum overcurrent threshold limit.
V IN(max) = maximum input voltage
The peak-to-peak inductor current (AC ripple current) is:
R SENSE =
55mV
I OUT(max)
I PP =
1 ?
?
I INDUCTOR(rms)
= I OUT(max) × 1 +
I P
3 ? I OUT(max) ?
I OVERCURRENT(max) =
P D(R
= I OVERCURRENT(max) × R CS
V OUT × (V IN(max) ? V OUT )
V IN(max) × f S × L
The peak inductor current is equal to the average output current
plus one half of the peak-to-peak inductor ripple current.
I PK = I OUT(max) + 0.5 × I PP
The RMS inductor current is used to calculate the I 2 × R losses
in the inductor.
2
? ?
Maximizing efficiency requires the proper selection of core 
material and minimizing the winding resistance. The high
frequency operation of the MIC2199 requires the use of fer-
rite materials for all but the most cost sensitive applications.
Lower cost iron powder cores may be used but the increase
in core loss will reduce the efficiency of the power supply. 
This is especially noticeable at low output power. The winding
resistance decreases efficiency at the higher output current 
levels. The winding resistance must be minimized although
this usually comes at the expense of a larger inductor.
The power dissipated in the inductor is equal to the sum
of the core and copper losses. At higher output loads, the
core losses are usually insignificant and can be ignored. At 
lower output currents, the core losses can be a significant 
contributor. Core loss information is usually available from
the magnetics vendor.
The maximum overcurrent threshold is:
95mV
R CS
The maximum power dissipated in the sense resistor is:
2
SENSE )
MOSFET Selection
External  N-Channel  logic-level  power  MOSFETs  must  be 
used  for  the  high-  and  low-side  switches.  The  MOSFET 
gate-to-source drive voltage of the MIC2199 is regulated by
an internal 5V V DD  regulator. Logic-level MOSFETs, whose 
operation is specified at V GS = 4.5V must be used.
It  is  important  to  note  the  on-resistance  of  a  MOSFET  in -
creases with increasing temperature. A 75°C rise in junction
temperature will increase the channel resistance of the MOS -
FET by 50% to 75% of the resistance specified at 25°C. This 
change in resistance must be accounted for when calculating
MOSFET power dissipation.
Total gate charge is the charge required to turn the MOSFET 
on  and  off  under  specified  operating  conditions  (V DS and
V GS ). The gate charge is supplied by the MIC2199 gate drive
circuit. At 500kHz switching frequency, the gate charge can
be a significant source of power dissipation in the MIC2199. 
At low output load this power dissipation is noticeable as a
reduction in efficiency. The average current required to drive 
the high-side MOSFET is:
I G[high-side](avg) = Q G × f S
January 2010
9
M9999-011310
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