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| 型号： | MIC4102YM |
| 厂商： | Micrel Inc |
| 文件页数： | 10/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 100V TTL 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1184 |
Micrel, Inc.
Vdd
MIC4102
A low power, high speed, level shifting circuit isolates the
low side (VSS pin) referenced circuitry from the high-
LS
Drive
Signal
LO
External
FET
side (HS pin) referenced driver. Power to the high-side
driver and UVLO circuit is supplied by the bootstrap
circuit while the voltage level of the HS pin is shifted
high.
The bootstrap circuit consists of an internal diode and
external capacitor, C B . In a typical application, such as
the synchronous buck converter shown in Figure 4, the
HS pin is at ground potential while the low-side MOSFET
Vss
Figure 2. Low-Side Driver Block Diagram
High-Side Driver and Bootstrap Circuit
A block diagram of the high-side driver and bootstrap
circuit is shown in Figure 3. This driver is designed to
is on. The internal diode allows capacitor C B to charge
up to V DD -V D during this time (where V D is the forward
voltage drop of the internal diode). After the low-side
MOSFET is turned off and the HO pin turns on, the
voltage across capacitor C B is applied to the gate of the
upper external MOSFET. As the upper MOSFET turns
on, voltage on the HS pin rises with the source of the
high-side MOSFET until it reaches V IN . As the HS and
HB pin rise, the internal diode is reverse biased
preventing capacitor C B from discharging.
drive a floating N-channel MOSFET, whose source
terminal is referenced to the HS pin.
Vdd
HB
C B
Vin
C VDD
Level
shift
HO
Q1
Lout
Vout
Vdd
HB
PWM
Q
FF
HS
Q2
Cout
_
Q
LO
C B
HO
External
FET
Vss
Figure 4. High-Side Driver and Bootstrap Circuit
HS
Figure 3. High-Side Driver Block Diagram
November 2006
10
M9999-112806
相关PDF资料 |
PDF描述 |
|---|---|
| MIC4103YM | IC MOSFET DRIVER 100V CMOS 8SOIC |
| MIC4124YME | IC MOSFET DRVR DUAL NONINV 8SOIC |
| MIC4128YMME | IC DRIVER MOSFET 1.5A DUAL 8MSOP |
| MIC4129YME | IC MOSFET DRIVER 6A INVERT 8SOIC |
| MIC4223YM | IC MOSFET DVR DUAL-INV 4A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4102YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver with Anti-Shoot-through Circuitry(Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103_10 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103YM | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103YM TR | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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