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| 型号： | MIC4102YM |
| 厂商： | Micrel Inc |
| 文件页数： | 8/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 100V TTL 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1184 |
Micrel, Inc.
Timing Diagrams
t HOON
30ns
60ns
t HOOFF
45ns
70ns
MIC4102
HO
4
t LOON
30ns
6
LO
2
70ns
3. V LOOFF <1.7V
8
10
Switch node
(HS Pin)
7. V SWth <(VDD-2.5V)
PWM
t LOOFF
30ns
60ns
1
5
t LSOFF
36ns
7 0ns
9
LS
Time Point Action
1-2
2-4
PWM signal goes high. This initiates the LO
signal to go low. The delay between PWM high to
(V LO –10%) is typically 30ns (t LOOFF )
LO goes low. When LO reaches 1.7V (V LOOFF ) the
low side MOSFET is deemed to be off. The high
because it is possible to have the SW node
oscillate, and could easily bounce through 10V
level. If the LO high transition has not happened
within 250ns, it is forced to happen, unless the LS
input is low.
side output HO then goes high. The delay
8-10
If at any time after 7 has occurred and LS pin
5-7
between 3 and 4 is typically 30ns (T HOON ); this
allows for large turn off delay times of MOSFETs.
PWM goes low; HO goes low, typically within
45ns, t HOOFF . The switch node (HS pin) is then
monitored; when the switch node is VDD-2.5V
(V SWTH ) the high side MOSFET is deemed to be
off and the LO output goes high within typically
30ns (t LOON ). This is controlled by a one shot and
remains high until PWM goes high. This is
goes low, the LO output will turn off within 36ns
(V LSOFF ). HO will remain off. The LS pin
overrides all shoot through control logic. If LS is
low at the start of the next cycle when PWM
signal goes high then HO shall switch transition
1-4 as normal. I.e. PWM signal equals HO output,
LO = 0V.
November 2006
8
M9999-112806
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4102YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver with Anti-Shoot-through Circuitry(Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103_10 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103YM | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103YM TR | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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