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| 型号： | MIC4102YM |
| 厂商： | Micrel Inc |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET 100V TTL 8SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-1184 |
Micrel, Inc.
MIC4102
Current in the high-side driver is sourced from capacitor
C B and flows into the HB pin and out the HO pin, into
the gate of the high side MOSFET. The return path for
the current is from the source of the MOSFET and back
to capacitor C B . The high-side circuit return path usually
does not have a low impedance ground plane so the
etch connections in this critical path should be short and
wide to minimize parasitic inductance. As with the low-
Charge C B through
internal diode when
HS pin is low
C Vdd
Vdd
HB
Low-side drive turn-off
current path
LO
Vss
_
side circuit, impedance between the MOSFET source
and the decoupling capacitor causes negative voltage
feedback which fights the turn-on of the MOSFET.
C B
HO
Level
shift
Q
Q
FF
PWM
It is important to note that capacitor CB must be placed
close to the HB and HS pins. This capacitor not only
provides all the energy for turn-on but it must also keep
High-side drive turn-off
current path
HS
LS
HB pin noise and ripple low for proper operation of the
high-side drive circuitry.
Low-side drive turn-on
current path
Figure 10. Turn-off Current Paths
The following circuit guidelines should be adhered to for
optimum circuit performance:
1. The Vcc and HB bypass capacitors must be
gnd C Vdd
plane
High-side drive turn-on
current path
C B
Vdd
HB
HO
HS
Level
shift
LO
Vss
_
Q
FF
Q
LS
PWM
gnd
plane
placed close to the supply and ground pins. It is
critical that the etch length between the high
side decoupling capacitor (C B ) and the HB & HS
pins be minimized to reduce lead inductance.
2. A ground plane should be used to minimize
parasitic inductance and impedance of the
return paths. The MIC4102 is capable of greater
than 3A peak currents and any impedance
between the MIC4102, the decoupling
capacitors and the external MOSFET will
degrade the performance of the driver.
3. Trace out the high di/dt and dv/dt paths, as
Figure 9. Turn-on Current Paths
Figure 10 shows the critical current paths when the
driver outputs go low and turn off the external
MOSFETs. Short, low impedance connections are
important during turn-off for the same reasons given in
the turn-on explanation. Current flowing through the
internal diode replenishes charge in the bootstrap
capacitor, CB.
shown in Figures 9 and 10 to minimize the etch
length and loop area for these connections.
Minimizing these parameters decreases the
parasitic inductance and the radiated EMI
generated by fast rise and fall times.
A typical layout of a synchronous Buck converter
power stage using the MIC4102 (Figure 11) is
shown in Figure 12.
November 2006
15
M9999-112806
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4102YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver with Anti-Shoot-through Circuitry(Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103_10 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Drivers 3/2A Sinking/Sourcing Current |
| MIC4103YM | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4103YM TR | 功能描述:功率驱动器IC 100V Half Bridge driver, 3/2A sink/Source Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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