参数资料
型号: MIC4744YTSE
厂商: Micrel Inc
文件页数: 11/23页
文件大小: 0K
描述: IC REG BUCK ADJ 2A DL 16TSSOP
标准包装: 94
类型: 降压(降压)
输出类型: 可调式
输出数: 2
输出电压: 可调至 0.6V
输入电压: 2.9 V ~ 5.5 V
频率 - 开关: 4MHz
电流 - 输出: 2A
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm)裸露焊盘
包装: 管件
供应商设备封装: 16-EPAD TSSOP
产品目录页面: 1093 (CN2011-ZH PDF)
其它名称: 576-3357-5
Micrel, Inc.
I pk = I OUT +
( V IN ? V OUT ) × V OUT
V IN
2 × fsw × L
MIC4744
Figure 4 demonstrates the off-time. During the off-time,
the high-side internal P-Channel MOSFET turns off.
Since the current in the inductor has to discharge, the
current flows through the free-wheeling Schottky diode
to the output. In this case, the inductor discharge rate is
(where V D is the diode forward voltage);
?
( V OUT
L
+ V D )
The total off time can be calculated as;
Efficiency = × 100
T OFF =
1 ? D
fsw
Figure 5. Discontinuous Operation
When the inductor current (IL) has completely
discharged, the voltage on the switch node rings at the
frequency determined by the parasitic capacitance and
the inductor value. In Figure 5, it is drawn as a DC
voltage, but to see actual operation (with ringing) refer to
the functional characteristics.
Discontinuous mode of operation has the advantage
over full PWM in that at light loads, the MIC4744 will skip
pulses as necessary, reducing gate drive losses,
drastically improving light load efficiency.
Efficiency Considerations
Calculating the efficiency is as simple as measuring
power out and dividing it by the power in;
P OUT
P IN
Where input power (P IN ) is;
Figure 4. Off-Time
Discontinuous Operation
Discontinuous operation is when the inductor current
discharges to zero during the off cycle. Figure 5
demonstrates the switch voltage and inductor currents
during discontinuous operation.
P IN = V IN × I IN
and output power (P OUT ) is calculated as;
P OUT = V OUT × I OUT
The Efficiency of the MIC4744 is determined by several
factors.
?
?
?
?
Rdson (Internal P-Channel Resistance)
Diode conduction losses
Inductor Conduction losses
Switching losses
Rdson losses are caused by the current flowing through
the high side P-Channel MOSFET. The amount of power
loss can be approximated by:
P SW = R DSON × I OUT 2 × D
March 2009
11
M9999-030209-C
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