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参数资料
| 型号： | MIC5011YM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF HI/LOW SIDE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 25µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.75 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC5011YMTR MIC5011YMTR-ND |
V
MIC5011
Applications Information (Continued)
Gate Control Circuit
When applying the MIC5011, it is helpful to understand the
operation of the gate control circuitry (see Figure 12). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).
When the MIC5011 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G)
at ground potential which effectively turns the external
MOSFET off.
Q6 is turned off when the MIC5011 is commanded on, and
Q5 pulls the gate up to supply (through 2 diodes). Next,
the charge pump begins supplying current to the gate. The
gate accepts charge until the gate-source voltage reaches
12.5V and is clamped by the zener diode.
A 2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are
Micrel, Inc.
ON. C1 is discharged, and C2 is charged to supply through
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns
off and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning
Q2 and Q4 back on, and Q1 and Q3 off.
In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone.
On supplies of more than approximately 14V, current ?ows
directly from Q5 through the zener diode to ground. To
prevent excessive current ?ow, the MIC5011 supply should
be limited to 15V in low-side applications.
The action of Q5 makes the MIC5011 operate quickly in
low-side applications. In high-side applications Q5 pre-
charges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low-
side drivers since the chip supply is boosted well above
the drain at turn-on.
+
Q1
125pF
Q3
125pF
Q5
C1
C1
COM
C2
C2
OFF
100 kHz
OSCILLATOR
Q2
Q4
500 ?
Q6
G AT E CLAMP
ZENER
G
12.5V
ON
Figure 12. Gate Control
Circuit Detail
S
July 2005
11
MIC5011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5011YN | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5012 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5012BN | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5012BWM | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5013 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Protected High- or Low-Side MOSFET Driver |
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