参数资料
型号: MIC5011YM TR
厂商: Micrel Inc
文件页数: 6/12页
文件大小: 0K
描述: IC DRIVER MOSF HI/LOW SIDE 8SOIC
标准包装: 2,500
配置: 高端或低端
输入类型: 非反相
延迟时间: 25µs
配置数: 1
输出数: 1
电源电压: 4.75 V ~ 32 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
其它名称: MIC5011YMTR
MIC5011YMTR-ND
MIC5011
Micrel, Inc.
V GATE =V +5V
250
200
150
100
Charge Pump
Output Current
V GATE =V +
+
1.0
0.8
0.6
0.4
Charge Pump
Output Current
V GATE =V +
VGATE =V ++5V
VS=V –5V
50
0
0
5
10
15 20 25
+
30
0.2
0
0
5
10
C2=1 nF
VS=V + –5V
15 20 25
30
Block Diagram
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Ground
4
V+
1
C1 Com C2
8 7 6
CHARGE
PUMP
MIC5011
5 Gate
Input 2
LOGIC
500 ?
12.5V
3 Source
Applications Information
Functional Description (Refer to Block Diagram)
The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the
gate of the power MOSFET is also held low through 500Ω
to an N-channel switch. When the input is taken above the
turn-on threshold (3.5V typical), the N-channel switch turns
off and the charge pump is turned on to charge the gate
of the power FET.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60μs typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25μs typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
pin 5 and source pin 3 to prevent exceeding the V GS rating
of the MOSFET at high supplies.
MIC5011
6
July 2005
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