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参数资料
| 型号： | MIC5011YM TR |
| 厂商： | Micrel Inc |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSF HI/LOW SIDE 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端或低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 25µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.75 V ~ 32 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | MIC5011YMTR MIC5011YMTR-ND |
MIC5011
Electrical Characteristics (Note 3)
Test circuit. T A = –55°C to +125°C, V + = 15V, all switches open, unless otherwise speci?ed.
Micrel, Inc.
Parameter
Conditions
Min
Typical
Max
Units
Supply Current, I 1
Logic Input Voltage
Logic Input Current, I 2
Input Capacitance
V + = 32V
V + = 5V
V + = 4.75V
V + = 15V
V + = 32V
Pin 2
V IN = 0V, S2 closed
V IN = V + = 32V
V IN = 5V, S2 closed
Adjust V IN for V GATE low
Adjust V IN for V GATE high
Adjust V IN for V GATE high
V IN = 0V
V IN = 32V
4.5
5.0
–1
0.1
8
1.6
5
10
20
4
2
1
μA
mA
mA
V
V
V
μA
μA
pF
Gate Drive, V GATE
Zener Clamp,
V GATE – V SOURCE
Gate Turn-on Time, t ON
(Note 4)
Gate Turn-off Time, t OFF
S1, S2 closed, V + = 4.75V, I GATE = 0, V IN = 4.5V
V S = V+, V IN = 5V V + = 15V, I GATE = 100μA, V IN = 5V
S2 closed, V IN = 5V V + = 15V, V S = 15V
V + = 32V, V S = 32V
V IN switched from 0 to 5V; measure time
for V GATE to reach 20V
V IN switched from 5 to 0V; measure time
for V GATE to reach 1V
7
24
11
11
10
27
12.5
13
25
4
15
16
50
10
V
V
V
V
μs
μs
Note 1
Note 2
Note 3
Note 4
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical speci?cations do not apply when
operating the device beyond its speci?ed Operating Ratings .
The MIC5011 is ESD sensitive.
Minimum and maximum Electrical Characteristics are 100% tested at T A = 25°C and T A = 85°C, and 100% guaranteed over the entire
range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Test conditions re?ect worst case high-side driver performance. Low-side and bootstrapped topologies are signi?cantly faster—see Appli-
cations Information . Maximum value of switching speed seen at 125°C, units operated at room temperature will re?ect the typical values
shown.
Test Circuit
V+
V IN
+ 1μF
500Ω
1W
MIC5011
1 V+ C1 8
2 Input Com 7
3 Source C2 6
4 Gnd Gate 5
1nF
1nF
V GATE
S2
VS
1nF S1
I5
July 2005
3
MIC5011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5011YN | 功能描述:功率驱动器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC5012 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5012BN | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5012BWM | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs |
| MIC5013 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Protected High- or Low-Side MOSFET Driver |
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