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| 型号： | MIC5018YM4 TR |
| 厂商： | Micrel Inc |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET HI SIDE SOT143 |
| 标准包装： | 1 |
| 系列： | IttyBitty® |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 750µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 2.7 V ~ 9 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 标准包装 |
| 产品目录页面： | 1110 (CN2011-ZH PDF) |
| 其它名称： | 576-1238-6 |
Micrel, Inc.
Application Information
Supply Bypass
A capacitor from VS to GND is recommended to control
switching and supply transients. Load current and supply
lead length are some of the factors that affect capacitor
size requirements.
A 4.7μF or 10μF aluminum electrolytic or tantalum
capacitor is suitable for many applications.
The low ESR (equivalent series resistance) of tantalum
capacitors makes them especially effective, but also
makes them susceptible to uncontrolled inrush current
from low impedance voltage sources (such as NiCd
MIC5018
Standard MOSFET
Standard MOSFETs are fully enhanced with a gate-to-
source voltage of about 10V. Their absolute maximum
gate-to-source voltage is ±20V.
With a 5V supply, the MIC5018 produces a gate output
of approximately 15V. Figure 2 shows how the remaining
voltages conform. The actual drain-to-source voltage
drop across an IRFZ24 is less than 0.1V with a 1A load
and 10V enhancement. Higher current increases the
drain-to-source voltage drop, increasing the gate-to-
source voltage.
+5V
VS
G
10V
C T L GND
5V
batteries or automatic test equipment). Avoid
instantaneously applying voltage, capable of high peak
current, directly to or near tantalum capacitors without
additional current limiting. Normal power supply turn-on
(slow rise time) or printed circuit trace resistance is
usually adequate for normal product usage.
MOSFET Selection
4.7 μ F
Logic
High
MIC5018
4 1
Voltages are approximate
* International Rectifier
standard MOSFET
2 3 15V
IRFZ24* approx. 0 V
To demonstrate
this circuit, trya
2 , 20W
load resistor.
The MIC5018 is designed to drive N-channel
enhancement type MOSFETs. The gate output (G) of
the MIC5018 provides a voltage, referenced to ground,
that is greater than the supply voltage. Refer to the
“Typical Characteristics: Gate Output Voltage vs. Supply
Voltage” graph.
The supply voltage and the MOSFET drain-to-source
voltage drop determine the gate-to-source voltage.
V GS = V G – (V SUPPLY – V DS )
where:
V GS = gate-to-source voltage (enhancement)
V G = gate voltage (from graph)
V SUPPLY = supply voltage
V DS = drain-to-source voltage
(approx. 0V at low current, or when fully enhanced)
V S U P P L Y
Figure 2. Using a Standard MOSFET
The MIC5018 has an internal zener diode that limits the
gate-to-ground voltage to approximately 16V.
Lower supply voltages, such as 3.3V, produce lower
gate output voltages which will not fully enhance
standard MOSFETs. This significantly reduces the
maximum current that can be switched. Always refer to
the MOSFET data sheet to predict the MOSFET’s
performance in specific applications.
Logic-Level MOSFET
Logic-level N-channel MOSFETs are fully enhanced with
a gate-to-source voltage of approximately 5V and
generally have an absolute maximum gate-to-source
voltage of ±10V.
+3.3V
VS
G
C T L GND
2
4
MIC5018
VS G
C T L GND
3
1
V G G
V G S
V LOAD
D
S
V D S
4.7 μ F
Logic
High
MIC5018
2 3
4 1
Voltages are approximate
* International Rectifier
logic-level MOSFET
9V
5.7 V
3.3 V
IRLZ44* approx. 0 V
To demonstrate
this circuit, try
5 , 5W or
47 , 1/4W
load resistors.
Figure 1. Voltages
The performance of the MOSFET is determined by the
gate-to-source voltage. Choose the type of MOSFET
according to the calculated gate-to-source voltage.
Figure 3. Using a Logic-Level MOSFET
Refer to Figure 3 for an example showing nominal
voltages. The maximum gate-to-source voltage rating of
a logic-level MOSFET can be exceeded if a higher
April 2006
6
M9999-042406
(408) 955-1690
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