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| 型号： | MIC5018YM4 TR |
| 厂商： | Micrel Inc |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET HI SIDE SOT143 |
| 标准包装： | 1 |
| 系列： | IttyBitty® |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 750µs |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 2.7 V ~ 9 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 标准包装 |
| 产品目录页面： | 1110 (CN2011-ZH PDF) |
| 其它名称： | 576-1238-6 |
Micrel, Inc.
supply voltage is used. An external zener diode can
clamp the gate-to-source voltage as shown in Figure 4.
The zener voltage, plus its tolerance, must not exceed
the absolute maximum gate voltage of the MOSFET.
V S U P P L Y
MIC5018
Split Power Supply
Refer to Figure 6. The MIC5018 can be used to control a
12V load by separating the driver supply from the load
supply.
+5V +12V
VS
G
C T L GND
VS
G
3V
C T L GND
12V
MIC5018
2 3
4 1
5V <V Z < 10V
Protects gate of
logic-level MOSFET
Logic-leve
N-channel
MO S F E T
4.7 μ F
Logic
High
MIC5018
4 1
Voltages are approximate
* International Rectifier
logic-level MOSFET
2 3 15V
IRLZ44* approx. 0 V
To demonstrate
this circuit, trya
40 , 5W or
100 , 2W
load resistor.
Figure 6. 12V High-Side Switch
Figure 4. Gate-to-Source Protection
A gate-to-source zener may also be required when the
maximum gate-to-source voltage could be exceeded due
to normal part-to-part variation in gate output voltage.
Other conditions can momentarily increase the gate-to-
source voltage, such as turning on a capacitive load or
shorting a load.
Inductive Loads
Inductive loads include relays, and solenoids. Long
leads may also have enough inductance to cause
adverse effects in some circuits.
+2.7V to +9V
A logic-level MOSFET is required. The MOSFET’s
maximum current is limited slightly because the gate is
not fully enhanced. To predict the MOSFETs
performance for any pair of supply voltages, calculate
the gate-to-source voltage and refer to the MOSFET
data sheet.
V GS = V G – (V LOAD SUPPLY – V DS )
V G is determined from the driver supply voltage using the
“Typical Characteristics: Gate Output Voltage vs. Supply
Voltage” graph.
Low-Side Switch Configuration
The low-side configuration makes it possible to switch a
voltage much higher than the MIC5018’s maximum
supply voltage.
4.7 μ F
VS
G
C T L GND
4.7 μ F
VS
G
C T L GND
MIC5018
2 3
4 1
On
Off
Schottky
Diode
Figure 5. Switching an Inductive Load
* International Rectifier
standard MOSFET
B V D SS = 100V
+2.7 to +9V
MIC5018
2
4
On
Off
3
1
+80V
To demonstrate
this circuit, try
1k, 10W or
33k, 1/4W
load resistors.
IRF540*
N-channel
MO S F E T
Figure 7. Low-Side Switch Configuration
Switching off an inductive load in a high-side application
momentarily forces the MOSFET source negative (as
the inductor opposes changes to current). This voltage
spike can be very large and can exceed a MOSFET’s
gate-to-source and drain-to-source ratings. A Schottky
diode across the inductive load provides a discharge
current path to minimize the voltage spike. The peak
current rating of the diode should be greater than the
load current.
In a low-side application, switching off an inductive load
will momentarily force the MOSFET drain higher than the
supply voltage. The same precaution applies.
The maximum switched voltage is limited only by the
MOSFET’s maximum drain-to-source ratings.
April 2006
7
M9999-042406
(408) 955-1690
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