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参数资料
| 型号： | MIC5162YMM |
| 厂商： | Micrel Inc |
| 文件页数： | 9/24页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR REG DUAL HS TERM 10MSOP |
| 标准包装： | 100 |
| 应用： | 控制器，DDR3，GDDR3/4/5 |
| 输入电压： | 1.35 V ~ 6 V |
| 输出数： | 1 |
| 输出电压： | 可编程 |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 10-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 1093 (CN2011-ZH PDF) |
| 其它名称： | 576-1820-5 MIC5162YMM-ND |
Micrel, Inc.
where I_SINK is the average sink current.
In a typical 3A peak SSTL_2 circuit, power
considerations for MOSFET selection would occur as
follows.
P D = (V DDQ ?V TT ) × I_SOURCE
P D = (2.5V ?1.25V) × 1.6A
P D = 2W
This typical SSTL_2 application would require both high-
side and low-side N-Channel MOSFETs to be able to
handle 2 Watts each. In applications where there is
excessive power dissipation, multiple N-Channel
MOSFETs may be placed in parallel. These MOSFETs
will share current, distributing power dissipation across
each device.
The maximum MOSFET die (junction) temperature limits
maximum power dissipation. The ability of the device to
dissipate heat away from the junction is specified by the
junction-to-ambient (θ JA ) thermal resistance. This is the
sum of junction-to-case (θ JC ) thermal resistance, case-
to-sink (θ CS ) thermal resistance and sink-to-ambient
(θ SA ) thermal resistance;
θ JA = θ JC + θ CS + θ SA
In the example of a 3A peak SSTL_2 termination circuit,
a D-pack N-Channel MOSFET that has a maximum
junction temperature of 125°C has been selected. The
device has a junction-to-case thermal resistance of
1.5°C/Watt. The application has a maximum ambient
temperature of 60°C. The required junction-to-ambient
thermal resistance can be calculated as follows:
T J ? T A
θ JA =
P D
Where T J is the maximum junction temperature, T A is the
maximum ambient temperature and P D is the power
dissipation.
In this example:
MIC5162
θ JA = 32 . 5 ° C / W
This shows that our total thermal resistance must be
better than 32.5°C/W. Since the total thermal resistance
is a combination of all the individual thermal resistances,
the amount of heat sink required can be calculated as
follows:
θ SA = θ JA ? (θ JC + θ CS )
In this example:
θ SA = 32 . 5 ° C / W - ( 1 . 5 ° C / W + 0 . 5 ° C )
θ SA = 30 . 5 ° C / W
In most cases, case-to-sink thermal resistance can be
assumed to be about 0.5°C/W.
The SSTL termination circuit for this example, using 2 D-
pack N-Channel MOSFETs (one high side and one on
the low side) will require at least a 30.5°C/W heat sink
per MOSFET. This may be accomplished with an
external heat sink or even just the copper area that the
MOSFET is soldered to. In some cases, airflow may also
be required to reduce thermal resistance.
MOSFET Gate Threshold
N-Channel MOSFETs require an enhancement voltage
greater than its source voltage. Typical N-Channel
MOSFETs have a gate-source threshold (V GS ) of 1.8V
and higher. Since the source of the high side N-Channel
is connected to V TT , the MIC5162 V CC pin requires a
voltage greater than the V GS voltage. For example, the
SSTL_2 termination circuit has a V TT voltage of 1.25V.
For an N-Channel that has a V GS rating of 2.5V, the V CC
voltage can be as low as 3.75V, but not less than 3.0V.
With an N-Channel that has a 4.5V V GS , the minimum
V CC required is 5.75V. Although these N-Channels are
driven below their full enhancement threshold, it is
recommended that the V CC voltage has enough margin
to be able to fully enhance the MOSFETs for large signal
transient response. In addition, low gate thresholds
θ JA =
θ JA =
March 2010
T J ? T A
P D
125 ° C - 60 ° C
2 W
9
MOSFETs are recommended to reduce the V CC
requirements.
M9999-033110
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC5162YMM TR | 功能描述:低压差稳压器 - LDO High Speed Termination Regulator Controller -(Lead Free) RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MIC5163_09 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual Regulator Controller for DDR3 GDDR3/4/5 Memory Termination |
| MIC5163YMM | 功能描述:低压差稳压器 - LDO Dual Regulator Controller for DDR2/3 Termination RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MIC5163YMM TR | 功能描述:低压差稳压器 - LDO Dual Regulator Controller for DDR2/3 Termination RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MIC5164 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual Regulator Controller for DDR3 GDDR3/4/5 Memory and High-Speed Bus Termination |
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