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| 型号： | MIC9130YQS |
| 厂商： | Micrel Inc |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR DC-DC PWM HV HS 16-QSOP |
| 标准包装： | 98 |
| 应用： | 控制器，电信 |
| 输入电压： | 9 V ~ 18 V |
| 输出数： | 1 |
| 输出电压： | 4.7 V ~ 5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-QSOP |
| 包装： | 管件 |
| 产品目录页面： | 1086 (CN2011-ZH PDF) |
| 其它名称： | 576-2418 MIC9130YQS-ND |
MIC9130
until the error ampli ? er takes control of the duty cycle. The
soft start capacitor is discharged by an internal MOSFET in
the MIC9130.
The soft start circuit is activated by the following events:
1. Line undervoltage pin less than the 1.21V threshold
2. V CC becomes less than the pre-regulator voltage turn
.................................................................off threshold.
3. The current limit comparator threshold is exceeded.
This can be disabled with a low level on the
CPWR pin.
4. A low level on the enable pin.
Calculating the soft capacitor depends on many parameters
such as the current limit of the circuit input voltage, output
power and output loading. A starting value of capacitor should
be chosen and the value can be adjusted later in the design.
Recommended starting values of soft start capacitance is
typically 10nF to 100nF. Values below 1nF may be ineffective
in slowing the output voltage turn on time.
CPWR Current Limit Selection
This pin controls whether the soft start circuit is reset if the
voltage on the Isns pin exceeds the overcurrent threshold.
When the CPWR pin is high, an overcurrent condition at the
ISNS pin will terminate the on-time of the gate drive pulse
and discharge the soft start capacitor to zero volts. This delay
in start up contributes to a reduction in the average output
current during an overcurrent or short circuit condition. A
smaller MOSFET may be used since the power dissipation
Micrel, Inc.
A resistor placed in series with the gate drive output attenu-
ates ringing in the etch connection between the MIC9130
and the MOSFET. Figure 8 shows a single resistor in series
between the driver output and the gate of the MOSFET. The
zener value should be greater than the gate drive voltage
to prevent excessive power dissipation, but less than the
maximum gate to source voltage rating.
Gate Drive
Output
GND
Figure 8
The circuitry shown in ? gure 9 allow different rise and fall times.
R1 and the input capacitance of the MOSFET determine the
rise-time of the gate voltage and therefore the turn-on time of
the MOSFET. The diode, D1 is reversed biased, which removes
R2 from the circuit. At turn-off, D1 is forward biased and the
parallel combination of R1 and R2 controls the turn-off time
of the MOSFET. The turn on-time is slower, which reduces
switching noise and ringing during turn-on. The turn-off time
is faster, which minimizes switching losses during turn-off and
improves ef ? ciency. If the turn-on time is to be faster than
the turn-off time, the diode should be reversed.
in the MOSFET is minimized under short circuit or overcur-
rent conditions.
If the CPWR pin is low an overcurrent or short circuit condi-
tions will not trip the soft start circuit. The pulse-by-pulse
current limit, inherent in current mode control, provides a
“brick wall” or constant current limit. With the power supply
operating in this mode, a smaller soft start capacitor can be
used to increase the turn on speed of the supply.
Gate Drive
Output
GND
R2
D1
R1
If the CPWR in is held low during the initial turn on at power
up and then raised high, the power supply can maximize
the turn-on time at start up and still provide a high level of
overcurrent and short circuit protection. The circuit shown
in Figure 7 performs this function.
MIC9130
V REF
Figure 9
A gate drive transformer is used where an increase in drive
voltage, isolation and/or voltage level shifting are required.
Gate drive transformers can have multiple windings and drive
multiple MOSFETs, including MOSFETs that require a drive
signal 180 degrees out of phase with the ICs drive signal.
D1
R1
CPWR
Figure 10 shows a gate drive transformer circuit. The ca-
pacitor, C1 removes DC from the drive circuit and prevents
C1
AGND
Figure 7
MOSFET Gate Drive Output
The MIC9130 has the capability to directly drive the gate of
a MOSFET. The output driver consists of a complimentary
P-channel and N-channel pair. The typical switching time
of the output is dependent on the IC supply voltage and the
gate charge required to turn the MOSFET on and off.
transformer saturation. R1 provides damping to eliminate
ringing in the circuit. R1 is usually in the 5 to 20 Ω range,
depending on the amount of damping necessary. D1 and
D2 form a clamp circuit, which prevents the voltage from
exceeding the V GMAX level. If the gate drive is well damped,
the diodes may be removed R2 is used to allow the trans-
former to reset properly.
November 2008
13
M9999-111108
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC9130YQS TR | 功能描述:电流型 PWM 控制器 SO-16 High Vin Telecom DC/DC PWM Control IC (Lead Free) RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| MIC9131 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:High-Voltage, High-Speed Telecom |
| MIC9131_06 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:High-Voltage, High-Speed Telecom |
| MIC9131BM | 功能描述:IC CTRLR DC-DC PWM HV HS 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| MIC9131BM TR | 功能描述:IC CTRLR DC-DC PWM HV HS 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
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