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参数资料
| 型号： | MID550-12A4 |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT RBSOA 1200V 670A Y3-DCB |
| 标准包装： | 2 |
| IGBT 类型： | NPT |
| 配置： | 单一 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.8V @ 15V，400A |
| 电流 - 集电极 (Ic)（最大）： | 670A |
| 电流 - 集电极截止（最大）： | 21mA |
| Vce 时的输入电容 (Cies)： | 26nF @ 25V |
| 功率 - 最大： | 2750W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y3-DCB |
| 供应商设备封装： | Y3-DCB |
MID 550-12 A4
MDI 550-12 A4
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Dimensions in mm (1 mm = 0.0394")
min. typ. max.
V (BR)CES
V GE = 0 V
1200
V
V GE(th)
I C = 16 mA, V CE = V GE
4.5
6.5
V
I CES
I GES
V CE = V CES
V CE = 0 V, V GE = ± 20 V
T J = 25 ° C
T J = 125 ° C
30
21 mA
mA
1.6
μA
V CE(sat)
C ies
C oes
C res
t d(on)
t r
t d(off)
t f
E on
E off
I C = 400 A, V GE = 15 V
V CE = 25 V, V GE = 0 V, f = 1 MHz
Inductive load, T J = 125 ° C
I C = 400 A, V GE = ±15 V
V CE = 600 V, R G = 1.8 W
2.3
26
4
2
100
60
600
90
64
59
2.8
V
nF
nF
nF
ns
ns
ns
ns
mJ
mJ
R thJC
0.05 K/W
R thJS
with heatsink compound
0.09
K/W
Equivalent Circuits for Simulation
Free Wheeling Diode (FRED)
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Conduction
V F
I F
I F = 400 A, V GE = 0 V
I F = 400 A, V GE = 0 V, T J = 125 ° C
T C = 25 ° C ?
T C = 80 ° C
2.4
1.9
2.6
2.0
750
460
V
V
A
A
I RM
t rr
R thJC
R thJS
I F = 400 A, V GE = 0 V, -di F /dt = 3000 A/ m s
T J = 125 ° C, V R = 600 V
300
200
0.18
A
ns
0.09 K/W
K/W
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.3 V; R 0 = 3.2 m W
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.3 V; R 0 = 1.5 m W
Thermal Response
Anti Parallel Diode (FRED)
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
V F
I F = 100 A, V GE = 0 V
I F = 100 A, V GE = 0 V, T J = 125 ° C
2.4
1.9
2.6
2.0
V
V
I F
I RM
T C = 25 ° C
T C = 80 ° C
I F = 100 A, V GE = 0 V, -di F /dt = 600 A/ m s
62
150
95
A
A
A
IGBT (typ.)
C th1 = 0.90 J/K; R th1 = 0.049 K/W
C th2 = 2.07 J/K; R th2 = 0.001 K/W
t rr
R thJC
R thJS
T J = 125 ° C, V R = 600 V
200
0.9
ns
0.45 K/W
K/W
Free Wheeling Diode (typ.)
C th1 = 0.71 J/K; R th1 = 0.090 K/W
C th2 = 1.30 J/K; R th2 = 0.002 K/W
? Additional current limitation by external leads
? 2000 IXYS All rights reserved
2-4
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