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参数资料
| 型号： | MITB10WB1200TMH |
| 厂商： | IXYS |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MODULE IGBT CBI |
| 标准包装： | 20 |
| IGBT 类型： | 沟道 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，10A |
| 电流 - 集电极 (Ic)（最大）： | 17A |
| 电流 - 集电极截止（最大）： | 600µA |
| Vce 时的输入电容 (Cies)： | 0.6nF @ 25V |
| 功率 - 最大： | 70W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | MiniPack2 |
| 供应商设备封装： | 迷你型Pack2 |
Advanced Technical Information
MITB10WB1200TMH
Input Rectifier Bridge D8 - D11
Ratings
Symbol
V RRM
I FAV
I DAVM
I FSM
I 2 t
P tot
V F
I R
R thJC
R thCH
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. forward surge current
I 2 t value for fusing
total power dissipation
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
sine 180°
rect.; d = 1 / 3
t = 10 ms; sine 50 Hz
t = 10 ms; sine 50 Hz
I F = 30 A
V R = V RRM
(per diode)
(per diode)
T VJ = 25°C
T C = 80°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 125°C
T C = 25°C
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 125°C
min.
typ.
1.35
1.35
0.3
0.7
max.
1600
22
61
300
tbd
450
tbd
50
1.6
0.01
2.1
Unit
V
A
A
A
A
A 2 s
A 2 s
W
V
V
mA
mA
K/W
K/W
Temperature Sensor NTC
Ratings
Symbol
R 25
B 25/50
Definitions
resistance
Conditions
T C = 25°C
min.
4.75
typ.
5.0
3375
max.
5.25
Unit
k W
K
Module
Ratings
Symbol
Definitions
Conditions
min.
typ.
max.
Unit
T VJ
T VJM
T stg
V ISOL
CTI
F C
d S
d A
Weight
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting force
creep distance on surface
strike distance through air
I ISOL < 1 mA; 50/60 Hz
-40
-40
40
12.7
12
35
125
150
125
2500
-
80
°C
°C
°C
V~
N
mm
mm
g
Equivalent Circuits for Simulation
I
V 0
R 0
Ratings
Symbol
V 0
R 0
V 0
R 0
V 0
R 0
V 0
R 0
V 0
R 0
Definitions
rectifier diode
IGBT
free wheeling diode
IGBT
free wheeling diode
Conditions
D8 - D13
T1 - T6
D1 - D6
T7
D7
T VJ = 125°C
T VJ = 125°C
T VJ = 125°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
0.9
16
1.0
125
1.15
45
1.0
125
1.4
60
max.
Unit
V
m W
V
m W
V
m W
V
m W
V
m W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
T C = 25°C unless otherwise stated
20100906b
4-8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MITB15WB1200TMH | 功能描述:分立半导体模块 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| MITEQNRE | 制造商:Tianma Micro-electronics Co 功能描述:NRE FOR BACKLIGHT AND INPUT VOLTAGE - Bulk |
| MITI-3 6-10 | 制造商:Hamlin Electronics 功能描述:SWITCH REED SPST-NO 500mA 170VDC 制造商:Hamlin Electronics 功能描述:SWITCH, REED, SPST-NO, 500mA, 170VDC 制造商:Hamlin Electronics 功能描述:SWITCH, REED, SPST-NO, 500mA, 170VDC; Contact Configuration:SPST-NO; Switching Voltage Max:170VDC; Switching Power Max:10W; Contact Current Max:500mA; Contact Resistance Max:150mohm; Switch Case:Glass; Body Length:0.276" ;RoHS Compliant: Yes |
| MITI-3 V16-12.5 | 制造商:Hamlin Electronics 功能描述:Reed Switches 2-Pin |
| MITI-3-7-15AT | 制造商:Hamlin Electronics 功能描述:Reed Sensor |
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