参数资料
型号: MIXA10WB1200TED
厂商: IXYS CORP
元件分类: IGBT 晶体管
英文描述: 17 A, 1200 V, N-CHANNEL IGBT
封装: MODULE-24
文件页数: 1/7页
文件大小: 0K
代理商: MIXA10WB1200TED
2009 IXYS All rights reserved
1 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Single Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES = 1200 V
V
CES = 1200 V
I
DAVM25 =
150 A I
C25
= 17 A I
C25
= 17 A
I
FSM
= 320 A V
CE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
Easyparallelingduetothepositive
temperaturecoefficientoftheon-state
voltage
RuggedXPTdesign
(Xtreme light Punch Through) results in:
-shortcircuitratedfor10sec.
-verylowgatecharge
-lowEMI
Thinwafertechnologycombinedwith
theXPTdesignresultsinacompetitive
lowV
CE(sat)
SONICdiode
-fastandsoftreverserecovery
-lowoperatingforwardvoltage
Application:
ACmotordrives
Solarinverter
Medicalequipment
Uninterruptiblepowersupply
Air-conditioningsystems
Weldingequipment
Switched-modeand
resonant-modepowersupplies
Package:
"E2-Pack"standardoutline
Insulatedcopperbaseplate
SolderingpinsforPCBmounting
Temperaturesenseincluded
Part name (Markingonproduct)
MIXA10WB1200TED
E 72873
21
22
1
D12
2
D13
D7
T7
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
D15
D11
D14
D16
3
23
24
14
7
16
15
11
10
18
17
12
6
20
19
13
5
4
NTC
8
9
Preliminarydata
相关PDF资料
PDF描述
MIXA150W1200TEH 220 A, 1200 V, N-CHANNEL IGBT
MIXA30W1200TMH 43 A, 1200 V, N-CHANNEL IGBT
MJ01-192RPFT-101 192 CONTACT(S), FEMALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
MJ01-96RPMP-132 96 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, PRESS FIT
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相关代理商/技术参数
参数描述
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MIXA10WB1200TML 功能描述:IGBT 模块 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
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MIXA150R1200VA 功能描述:IGBT 模块 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
MIXA150W1200TEH 功能描述:IGBT 模块 Six Pack SPT IGBT RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: