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参数资料
| 型号： | MIXA10WB1200TED |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 17 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-24 |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 代理商： | MIXA10WB1200TED |
2009 IXYS All rights reserved
4 - 7
20090804b
MIXA10WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitive reverse voltage
T
VJ =
25°C
1600
V
I
FAV
I
DAVM
average forward current
max. average DC output current
sine 180°
T
C =
80°C
rect.; d = 1/
3
T
C =
80°C
37
105
A
I
FSM
max. forward surge current
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
320
280
A
I2t
I2t value for fusing
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
510
390
A2s
P
tot
total power dissipation
T
C =
25°C
110
W
V
F
forward voltage
I
F = 50 A
T
VJ =
25°C
T
VJ = 125°C
1.34
1.7
V
I
R
reverse current
V
R = VRRM
T
VJ =
25°C
T
VJ = 125°C
0.2
0.02
mA
R
thJC
thermal resistance junction to case
(perdiode)
1.1
K/W
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
R
25
B
25/50
resistance
T
C =
25°C
4.75
5.0
3375
5.25
k
W
K
Module
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
125
150
125
°C
V
ISOL
isolation voltage
I
ISOL < 1 mA; 50/60 Hz
2500
V~
CTI
comparative tracking index
-
M
d
mounting torque (M5)
3
6
Nm
d
S
d
A
creep distance on surface
strike distance through air
6
mm
R
pin-chip
resistance pin to chip
5
mW
R
thCH
thermal resistance case to heatsink
withheatsinkcompound
0.02
K/W
Weight
180
g
Equivalent Circuits for Simulation
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
0
R
0
rectifier diode
D8 - D13
T
VJ = 150°C
0.88
9
V
m
W
V
0
R
0
IGBT
T1 - T6
T
VJ = 150°C
1.1
153
V
m
W
V
0
R
0
free wheeling diode
D1 - D6
T
VJ = 150°C
1.1
90
V
m
W
V
0
R
0
IGBT
T7
T
VJ = 150°C
1.1
153
V
m
W
V
0
R
0
free wheeling diode
D7
T
VJ = 150°C
1.15
170
V
m
W
I
V
0
R
0
T
C=25°Cunlessotherwisestated
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