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参数资料
| 型号： | MJ14001 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| 中文描述： | 60 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件页数： | 2/6页 |
| 文件大小： | 241K |
| 代理商： | MJ14001 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
MJ14002, MJ14003
Collector Cutoff Current
ICEO
80
—
mA
(VCE = 60 Vdc, VBE(off) = 1.5 V)
1.0
(VCB = 80 Vdc, IE = 0)
MJ14001
—
Emitter Cutoff Current
MJ14002, MJ14003
IEBO
—
1.0
1.0
mA
—
(IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
30
15
—
100
—
—
1
2
—
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2%.
100
70
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0
3.0
5.0
7.0
100
20
3.0
2.0
10
20
50
0.5
0.3
0.1
dc
I
1.0
μ
s
1.0 ms
0.2
0.7
1.0
5.0
7.0
10
50
30
70
30
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25
°
C
5.0 ms
MJ14001
MJ14002, MJ14003
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
200 C. TJ(pk) may be calculated from the data in Fig-
ure 13. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
相关PDF资料 |
PDF描述 |
|---|---|
| MJ14001 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14003 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14003 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ14001_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High?Current Complementary Silicon Power Transistors |
| MJ14001G | 功能描述:两极晶体管 - BJT 60A 60V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002 | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
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