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参数资料
| 型号： | MJ14001 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| 中文描述： | 60 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件页数： | 4/6页 |
| 文件大小： | 241K |
| 代理商： | MJ14001 |
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Turn–On Switching Times
Figure 10. Turn–Off Switching Times
Figure 11. Capacitance Variation
Figure 12. Switching Test Circuit
4.0
3.0
IC, COLLECTOR CURRENT (AMPS)
0.04
2.0
1.0
0.7
0.5
0.3
0.2
tr
0.1
0.07
C
5000
3000
2000
10000
7000
2.0
3.0
7.0
100
20
1.0
1000
700
500
300
200
100
5.0
10
50
VR, REVERSE VOLTAGE (VOLTS)
t, TIME (ms)
1.0
0.7
0.01
0.02
0.1
0.07
0.05
r
2.0
10
100
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 0.584
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1000
D = 0.5
0.5
0.2
DUTY CYCLE, D = t1/t2
Figure 13. Thermal Response
t
μ
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
3.0
7.0
5.0
0.5
0.3
0.2
1.0
0.7
0.1
0.07
0.05
0.03
0.02
0.01
t
μ
0.7
10
20
30
70
50
1.0
2.0
3.0
7.0
5.0
0.7
10
20
30
70
50
Cob
30
70
0.02
0.03
0.3
0.03
0.05
0.07
1.0
5.0
3.0
2000
200 300
500 700
20
30
50 70
7.0
0.2
0.1
0.5
0.3
0.7
0.05
0.2
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
td
ts
tf
TJ = 25
°
C
Cib
Cib
Cob
+2.0 V
0
tr
≤
20 ns
–12 V
10 to 100
μ
s
DUTY CYCLE
≈
2.0%
VCC
RL
–30 V
TO SCOPE
tr
≤
20 ns
RB
VCC
RL
–30 V
RB
TO SCOPE
tr
≤
20 ns
VBB
+7.0 V
+10
V
0
–12 V
10 to 100
μ
s
tr
≤
20 ns
DUTY CYCLE
≈
2.0%
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
0.1
0.02
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| MJ14001 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14003 | COMPLEMENTARY SILICON POWER TRANSITORS |
| MJ14002 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
| MJ14003 | 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ14001_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High?Current Complementary Silicon Power Transistors |
| MJ14001G | 功能描述:两极晶体管 - BJT 60A 60V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002 | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 功能描述:两极晶体管 - BJT 60A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ14002G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
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