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参数资料
| 型号： | MJ15001 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS |
| 中文描述： | 15 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/4页 |
| 文件大小： | 165K |
| 代理商： | MJ15001 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
—
100
μ
Adc
(VEB = 5 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
Adc
DC Current Gain
(IC = 4 Adc, VCE = 2 Vdc)
Collector–Emitter Saturation Voltage
VCE(sat)
25
—
150
1
—
Vdc
Current–Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
Cob
2
—
—
1000
MHz
pF
I
5
3
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
7
10
200
10
7
2
2
3
50
70 100
20
30
200
1
0.5
0.3
0.2
0.7
TC = 25
°
C
TJ = 200
°
C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ (pk) = 200 C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ15001_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15001G | 功能描述:两极晶体管 - BJT 15A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15002 | 功能描述:两极晶体管 - BJT 15A 140V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15002G | 功能描述:两极晶体管 - BJT 15A 140V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15003 | 功能描述:两极晶体管 - BJT 20A 140V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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