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参数资料
| 型号： | MJ2500 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS |
| 中文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 2/4页 |
| 文件大小： | 132K |
| 代理商： | MJ2500 |
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
(VEB = 60 Vdc, RBE = 1.0 k ohm)
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150 C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ2500, MJ3000
MJ2501, MJ3001
IEBO
ICEO
—
—
—
—
—
1.0
1.0
5.0
2.0
1.0
mAdc
mAdc
MJ2500, MJ3000
(1)Pulse Test: Pulse Width
300
μ
s, Duty Cycle
—
4.0
—
3.0
Vdc
2.0%.
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
h
TJ = 150
°
C
25
°
C
–55
°
C
VCE = 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
500
300
200
100
3000
2000
h
1000
30
50
TC = 25
°
C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
103
105
106
50
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
VBE(sat) @ IC/IB = 250
V
VCE(sat) @ IC/IB = 250
TJ = 25
°
C
VBE @ VCE = 3.0 V
0.01
0.2
0.5
0.05
1.0
2.0
10
5.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25
°
C
BONDING WIRE LIMITED
10
7.0
5.0
1.0
Figure 5. DC Safe Operating Area
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2.0
10
20
100
TJ = 200
°
C
0.2
3.0
0.5
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
30
70
1.0
0.7
0.1
2.0
50
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.1
0.02
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
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相关代理商/技术参数 |
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